BCW66

SMD Type Transistors NPN Transistors BCW66 (KCW66) ■ Features ● BCW66 is subdivided into three groups F,G and H according to DC current gain ● Complementary to BCW68 +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.21.1 -0.1 1. Base 2. Emitter 3. Collector 0-0.1 +0.10.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating 75 45 5 800 200 150 -55 to 150 Unit V mA mW ℃ www.kexin.com.cn 1 SMD Type NPN Transistors BCW66 (KCW66) ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage (Note.1) Base - emitter saturation voltage (Note.1) DC current gain Collector output capacitance Collector input capacitance Noise figure Transition frequency Symbol Test Conditions VCBO Ic= 100 μA， IE= 0 VCEO VEBO Ic= 10 mA， IB= 0 IE= 100μA， IC= 0 ICBO VCB= 45 V , IE= 0 IEBO VEB= 4V , IC=0 IC=100 mA, IB=10mA VCE(sat) IC= 500 mA, IB= 50mA VBE(sat) IC= 500 mA, IB= 50mA VCE= 10V, IC= 100uA F hFE(1) G H VCE= 1V, IC= 10mA F hFE(2) G H VCE= 1V, IC= 100mA F hFE(3) G H VCE= 2V, ...