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BC848 Dataheets PDF



Part Number BC848
Manufacturers SeCoS
Logo SeCoS
Description General Purpose Transistor
Datasheet BC848 DatasheetBC848 Datasheet (PDF)

Elektronische Bauelemente BC846A, B BC847A, B, C BC848A, B, C A suffix of "-C" specifies halogen & lead-free FEATURES n General Purpose Transistor NPN Type n Collect current : 0.1A n Operating Temp. : -55OC ~ +150OC n RoHS compliant product C OLLE C TOR 3 1 B AS E 2 E MITTE R 3 1 2 A L 3 Top View 12 VG BS C D HK SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 J L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 Al.

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Elektronische Bauelemente BC846A, B BC847A, B, C BC848A, B, C A suffix of "-C" specifies halogen & lead-free FEATURES n General Purpose Transistor NPN Type n Collect current : 0.1A n Operating Temp. : -55OC ~ +150OC n RoHS compliant product C OLLE C TOR 3 1 B AS E 2 E MITTE R 3 1 2 A L 3 Top View 12 VG BS C D HK SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 J L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS˄Tamb=25ć unless otherwise specified˅ Parameter Symbol Test conditions MIN Collector-base breakdown voltage Collector-emitter breakdown voltage BC846 BC847 BC848 BC846 BC847 BC848 VCBO Ic= 10 ­Aˈ IE=0 VCEO Ic= 10 mAˈ IB=0 80 50 30 65 45 30 Emitter-base breakdown voltage Collector cut-off current Collector cut-off current BC846 BC847 BC848 BC846 BC847 BC848 VEBO ICBO ICEO IE= 10 ­Aˈ IC=0 VCB= 70 V , VCB= 50 V , VCB= 30 V , VCE= 60 V , VCE= 45 V , VCE= 30 V , IE=0 IE=0 IE=0 IB=0 IB=0 IB=0 6 Emitter cut-off current IEBO VEB= 5 V , IC=0 DC current gain BC846A,847A,848A BC846B,847B,848B BC847C,BC848C HFE˄1˅ VCE= 5V, IC= 2mA 110 200 420 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5 mA MAX UNIT V V V 0.1 ­A 0.1 ­A 0.1 ­A 220 450 800 0.5 V Base-emitter saturation voltage VBE(sat) IC= 100 mA, IB= 5mA 1.1 Transition frequency VCE= 5 V, IC= 10mA fT 100 f=100MHz DEVICE MARKING BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K; BC848C=1L V MHz http://www.SeCoSGmbH.com 01-Jun-2004 Rev.B Any changing of specification will not be informed individual Page 1 of 3 Elektronische Bauelemente BC846A, B BC847A, B, C BC848A, B, C Typical Characteristics BC846A/B, BC847A/B, BC848A/B hFE, NORMALIZED DC CURRENT GAIN 2.0 1.5 VCE = 10 V TA = 25°C 1.0 0.8 0.6 0.4 0.3 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain 200 V, VOLTAGE (VOLTS) 1.0 0.9 TA = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.7 0.6 VBE(on) @ VCE = 10 V 0.5 0.4 0.3 0.2 0.1 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mAdc) Figure 2. “Saturation” and “On” Voltages VCE, COLLECTOR-EMITTER VOLTAGE (V) 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = IC = 50 mA IC = 100 mA 10 mA 20 mA 0.8 0.4 0 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 Figure 3. Collector Saturation Region 20 θVB, TEMPERATURE COEFFICIENT (mV/ °C) 1.0 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.2 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient făT, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) 10 7.0 TA = 25°C 5.0 Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances 20 40 400 300 200 100 80 VCE = 10 V TA = 25°C 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 6. Current–Gain – Bandwidth Product http://www.SeCoSGmbH.com 01-Jun-2004 Rev.B Any changing of specification will not be informed individual Page 2 of 3 Elektronische Bauelemente BC846A, B BC847A, B, C BC848A, B, C hFE, DC CURRENT GAIN (NORMALIZED) BC846A/B, BC847A/B, BC848A/B VCE = 5 V TA = 25°C 2.0 1.0 0.5 0.2 0.1 0.2 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 7. DC Current Gain V, VOLTAGE (VOLTS) 1.0 TA = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage θVB, TEMPERATURE COEFFICIENT (mV/ °C) 2.0 -1.0 TA = 25°C 1.6 -1.4 20 mA 50 mA 100 mA 200 mA 1.2 0.8 IC = 10 mA -1.8 θVB for VBE -2.2 -55°C to 125°C 0.4 -2.6 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 Figure 9. Collector Saturation Region 20 -3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) C, CAPACITANCE (pF) 40 TA = 25°C 20 Cib 10 6.0 4.0 Cob 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance http://www.SeCoSGmbH.com 01-Jun-2004 Rev.B 50 100 făT, CURRENT-GAIN - BANDWIDTH PRODUCT 500 VCE = 5 V TA = 25°C 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 12. Current–Gain – Bandwidth Product Any changing of specification will not be informed individual Page 3 of 3 .


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