BAV103

Small Signal Product CREAT BY ART BAV100/101/102/103 Taiwan Semiconductor Hermetically Sealed Glass High Voltage Switching Diodes FEATURES - High voltage switching device - Ideal for automated placement - Hermetically sealed glass - Compression bonded construction - All external surfaces are corrosion resistant and leads are readily solderable - RoHS compliant MINI MELF MECHANICAL DATA - Polarity: Indicated by black cathode band MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation Repetitive Peak Reverse Voltage Average Rectified Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 μs PD VRRM IF(AV) IFSM 500 250 200 1.0 4.0 Operating and Storage Temperature Range TJ , TSTG -65 to +200 Electrical Characteristics PARAMETER SYMBOL Breakdown Voltage Forward Voltage Peak Reverse Current BAV100 IR = 100 μA BAV101 IR = 100 μA BAV102 IR = 100 μA BAV103 IR = 100 μA IF = 100 mA BAV100 VR = 50 V BAV101 VR = 100 V BAV102 VR = 150 V BAV103 VR = 200 V BV VF IR Thermal Resistance, Junction to Ambient RθJA Junction Capacitance VR = 0 , f = 1.0 MHz CJ Reverse Recovery Time (Note) trr Notes : Reverse recovery test conditions : IF = IR = 30 mA , Irr = 30 mA , RL = 100 Ω MIN MAX 60 120 200 - 250 - 1.0 100 - 100 100 100 350 - 5.0 - 50 UNIT mW V mA A oC UNIT V V nA oC/W pF ns Document Number: DS_S1501002 Version: B15 Small Signal Product CR...