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RU20P5E Dataheets PDF



Part Number RU20P5E
Manufacturers Ruichips
Logo Ruichips
Description P-Channel Advanced Power MOSFET
Datasheet RU20P5E DatasheetRU20P5E Datasheet (PDF)

RU20P5E P-Channel Advanced Power MOSFET Features • -20V/-5A, RDS (ON) =50mΩ(Typ.)@VGS=-4.5V RDS (ON) =65mΩ(Typ.)@VGS=-3V • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description SDG Applications • Load Switch • Power Management SOT89 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction.

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RU20P5E P-Channel Advanced Power MOSFET Features • -20V/-5A, RDS (ON) =50mΩ(Typ.)@VGS=-4.5V RDS (ON) =65mΩ(Typ.)@VGS=-3V • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description SDG Applications • Load Switch • Power Management SOT89 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-4.5V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TA=25°C -20 ±12 150 -55 to 150 -1.2 V °C °C A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C -20 A -5 A -3.9 1.25 W 0.8 10 °C/W 100 °C/W 56 mJ Ruichips Semiconductor Co., Ltd Rev. C– DEC., 2013 1 www.ruichips.com RU20P5E Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20P5E Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA VDS=-16V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA IGSS Gate Leakage Current VGS=±12V, VDS=0V ⑤ RDS(ON) VGS=-4.5V, IDS=-5A Drain-Source On-state Resistance VGS=-3V, IDS=-4A -20 -1 -30 -0.5 -1.5 ±100 50 60 65 80 Diode Characteristics VSD⑤ trr Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics⑥ ISD=-5A, VGS=0V ISD=-5A, dlSD/dt=100A/µs -1.2 11 6 RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics⑥ VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-10V, Frequency=1.0MHz VDD=-10V, IDS=-5A, VGEN=-4.5V, RG=6Ω 1.1 545 90 45 6 12 25 14 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-16V, VGS=-4.5V, IDS=-5A 6.8 1.4 2.3 Unit V µA V nA mΩ mΩ V ns nC Ω pF ns nC Notes: ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. The value in any given application depends on the user's specific board design. ④Limited by TJmax, IAS =-15A, VDD =-16V, RG = 50Ω, Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. C– DEC., 2013 2 www.ruichips.com RU20P5E Ordering and Marking Information Device RU20P5E Marking RU20P5E Package Packaging Quantity Reel Size Tape width SOT89 Tape&Reel 1000 7’’ 12mm Ruichips Semiconductor Co., Ltd Rev. C– DEC., 2013 3 www.ruichips.com RU20P5E PD - Power (W) -ID - Drain Current (A) RDS(ON) limited Typical Characteristics Power Dissipation 2 1 0 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Safe Operation Area 100 10µs 10 100µs 1ms 10ms 1 0.1 DC TA=25°C 0.01 0.01 0.1 1 10 100 -VDS - Drain-Source Voltage (V) RDS(ON) - On - Resistance (mΩ) -ID - Drain Current (A) Drain Current 6 5 4 3 2 1 VGS=-4.5V 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 175 Drain Current 300 Ids=-5A 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10 -VGS - Gate-Source Voltage (V) Thermal Transient Impedance ZthJA - Thermal Response (°C/W) Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 100 10 1 0.1 0.01 1E-05 Single Pulse 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (sec) RθJA=100°C/W 1 Ruichips Semiconductor Co., Ltd Rev. C– DEC., 2013 4 www.ruichips.com RU20P5E -ID - Drain Current (A) Typical Characteristics Output Characteristics 12 -4.5V 9 -3V -2.5V 6 Normalized On Resistance 3 -1V 0 01234 -VDS - Drain-Source Voltage (V) 5 Drain-Source On Resistance 2.5 VGS=-4.5V IDS=-5A 2.0 1.5 1.0 0.5 0.0 -50 TJ=25°C Rds(on)=50mΩ -25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 Capacitance 1000 Frequency=1.0MHz 800 600 Ciss 400 200 Coss Crss 0 1 10 100 -VDS - Drain-Source Voltage (V) C - Capacitance (pF) Ruichips Semiconductor Co., Ltd Rev. C– DEC., 2013 5 -VGS - Gate-Source Voltage (V) -IS - Source Current (A) RDS(ON) - On Resistance (mΩ) Drain-Source On Resistance 200 150 100 50 0 0 10 -2.5V -4.5V 2468 -ID - Drain Current (A) 10 Source-Drain Diode Forward 1 TJ=150°C 0.1 TJ=25°C 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD - Source-Drain Voltage (V) Gate Charge 10 9 VDS=-16V IDS=-5A 8 7 6 5 4 3 2 1 0 0246 QG - Gate Charge (nC) 8 www.ruichips.com Avalanche Test Circuit and Waveforms RU20P5E Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. C– DEC..


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