Document
RU20P5E
P-Channel Advanced Power MOSFET
Features
• -20V/-5A,
RDS (ON) =50mΩ(Typ.)@VGS=-4.5V RDS (ON) =65mΩ(Typ.)@VGS=-3V
• Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
SDG
Applications
• Load Switch • Power Management
SOT89
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=-4.5V)
PD Maximum Power Dissipation
RθJC RθJA③
Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
④
EAS
Avalanche Energy, Single Pulsed
S
P-Channel MOSFET
Rating
Unit
TA=25°C
-20 ±12 150 -55 to 150 -1.2
V
°C °C A
TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C
-20 A
-5 A
-3.9
1.25 W
0.8
10 °C/W
100 °C/W
56 mJ
Ruichips Semiconductor Co., Ltd Rev. C– DEC., 2013
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RU20P5E
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU20P5E Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
VDS=-16V, VGS=0V IDSS Zero Gate Voltage Drain Current
TJ=125°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250µA
IGSS Gate Leakage Current
VGS=±12V, VDS=0V
⑤
RDS(ON)
VGS=-4.5V, IDS=-5A Drain-Source On-state Resistance
VGS=-3V, IDS=-4A
-20 -1 -30
-0.5 -1.5 ±100
50 60 65 80
Diode Characteristics
VSD⑤ trr
Diode Forward Voltage Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics⑥
ISD=-5A, VGS=0V ISD=-5A, dlSD/dt=100A/µs
-1.2 11 6
RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time
tr Turn-on Rise Time td(OFF) Turn-off Delay Time
tf Turn-off Fall Time Gate Charge Characteristics⑥
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-10V, Frequency=1.0MHz
VDD=-10V, IDS=-5A, VGEN=-4.5V, RG=6Ω
1.1 545 90 45
6 12 25 14
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS=-16V, VGS=-4.5V, IDS=-5A
6.8 1.4 2.3
Unit
V µA V nA mΩ mΩ V ns nC
Ω pF
ns
nC
Notes:
①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. The value in any given application
depends on the user's specific board design. ④Limited by TJmax, IAS =-15A, VDD =-16V, RG = 50Ω, Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd Rev. C– DEC., 2013
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RU20P5E
Ordering and Marking Information
Device
RU20P5E
Marking
RU20P5E
Package Packaging Quantity Reel Size Tape width
SOT89
Tape&Reel
1000
7’’
12mm
Ruichips Semiconductor Co., Ltd Rev. C– DEC., 2013
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RU20P5E
PD - Power (W)
-ID - Drain Current (A)
RDS(ON) limited
Typical Characteristics
Power Dissipation
2
1
0 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Safe Operation Area
100 10µs
10 100µs 1ms 10ms
1 0.1 DC
TA=25°C 0.01
0.01 0.1 1 10 100
-VDS - Drain-Source Voltage (V)
RDS(ON) - On - Resistance (mΩ)
-ID - Drain Current (A)
Drain Current
6
5
4
3
2
1
VGS=-4.5V 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
175
Drain Current
300
Ids=-5A
250
200
150
100
50
0 0 1 2 3 4 5 6 7 8 9 10
-VGS - Gate-Source Voltage (V)
Thermal Transient Impedance
ZthJA - Thermal Response (°C/W)
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 100
10
1
0.1
0.01 1E-05
Single Pulse
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (sec)
RθJA=100°C/W
1
Ruichips Semiconductor Co., Ltd Rev. C– DEC., 2013
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RU20P5E
-ID - Drain Current (A)
Typical Characteristics
Output Characteristics
12
-4.5V 9
-3V
-2.5V
6
Normalized On Resistance
3 -1V
0 01234
-VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=-4.5V IDS=-5A 2.0
1.5
1.0
0.5
0.0 -50
TJ=25°C Rds(on)=50mΩ
-25 0 25 50 75 100 125
TJ - Junction Temperature (°C)
150
Capacitance
1000
Frequency=1.0MHz 800
600 Ciss
400
200 Coss
Crss 0
1
10
100
-VDS - Drain-Source Voltage (V)
C - Capacitance (pF)
Ruichips Semiconductor Co., Ltd Rev. C– DEC., 2013
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-VGS - Gate-Source Voltage (V)
-IS - Source Current (A)
RDS(ON) - On Resistance (mΩ)
Drain-Source On Resistance
200
150
100 50 0 0
10
-2.5V
-4.5V
2468
-ID - Drain Current (A)
10
Source-Drain Diode Forward
1 TJ=150°C
0.1 TJ=25°C
0.01 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD - Source-Drain Voltage (V)
Gate Charge
10 9 VDS=-16V IDS=-5A 8 7 6 5 4 3 2 1 0 0246
QG - Gate Charge (nC)
8
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Avalanche Test Circuit and Waveforms
RU20P5E
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd Rev. C– DEC..