RU20P3B

RU20P3B P-Channel Advanced Power MOSFET MOSFET Features -20V/-3A, RDS (ON) =80mΩ (Typ.) @ VGS=-4.5V RDS (ON) =110mΩ (Typ.) @ VGS=-2.5V Low RDS (ON) Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available Pin Description SOT-23 Applications Power Management Load Switch Absolute Maximum Ratings P-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=-4.5V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating -20 ±12 150 -55 to 150 -1.2 ① -12 -3 -2.3 1 0.64 125 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 www.ruichips.com RU20P3B Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20P3B Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VGS=0V, IDS=-250µA -20 VDS=-20V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA -0.5 VGS=±12V, VDS=0V ③ RDS(ON) Drain-Source On-state Resistance VGS=-4.5V, IDS=-3A VGS=-2.5V, IDS=-2A V -1 µA -30 - -1 V ±100 nA 80 100 mΩ 110 150 m...