RU20E60L

RU20E60L N-Channel Advanced Power MOSFET Features 20V/60A, RDS (ON) =6mΩ(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and Rugged 100% avalanche tested 175°C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC converter Motor Drives Pin Description D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=4.5V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 1 S N-Channel MOSFET Rating Unit TC=25°C 20 ±16 175 -55 to 175 60 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 240 A 60 A 43 52 W 26 2.9 °C/W 100 °C/W 90 mJ www.ruichips.com RU20E60L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20E60L Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 20 VDS=20V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C 1 30 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 0.5 1 1.5 IGSS Ga...