RU1Z120R

RU1Z120R N-Channel Advanced Power MOSFET Features 150V/120A, RDS (ON) =11mΩ(Typ.)@VGS=10V Reliable and Rugged 100% avalanche tested 175°C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications High Speed Power Switching High Efficiency Synchronous in SMPS Automotive applications and a wide variety of other applications GDS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 150 ±25 175 -55 to 175 120 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480 A 120 A 85 375 W 188 0.4 °C/W 62.5 °C/W 552 mJ Ruichips Semiconductor Co., Ltd Rev. A– Feb., 2014 1 www.ruichips.com RU1Z120R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1Z120R Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS Zero Gate Voltage Drain Current VDS=150V, VGS=0V TJ=125°C VGS(th) Gate Thresh...