RU1HP55R

RU1HP55R P-Channel Advanced Power MOSFET Features -100V/-55A, RDS (ON) =40mΩ(Typ.)@VGS=-10V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175°C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Applications Inverters Pin Description G D S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TC=25°C -100 ±25 175 -55 to 175 -55 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C -220 -55 -39 176 88 0.85 62.5 A A W °C/W °C/W 400 mJ Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 1 www.ruichips.com RU1HP55R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1HP55R Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA IDSS Zero Gate Voltage Drain Current VDS=-100V, VGS=0V TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA IGSS Gate Leaka...