RU1H60R

RU1H60R N-Channel Advanced Power MOSFET Features 100V/60A, RDS (ON) =17 mΩ(Typ.)@VGS=10V RDS (ON) =18.5 mΩ(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Applications Pin Description TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright Ruichips Semiconductor Co., Ltd Rev. B– DEC., 2012 Rating 100 ±20 175 -55 to 175 ① 60 ② 240 ① 60 39 120 60 1.25 Unit V °C °C A A A W W °C/W 169 mJ www.ruichips.com RU1H60R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1H60R Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS=0V, IDS=250µA 100 VDS=100V, VGS=0V TJ=85°C VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VDS=VGS, IDS=250µA VGS=±20V, VDS=0V 1 ④ RDS(ON) Drain-Source On-state Resistance VG...