RU1H300Q

RU1H300Q N-Channel Advanced Power MOSFET Features 100V/300A, RDS (ON) =3mΩ(Typ.)@VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175°C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Applications High Efficiency Synchronous Rectification in SMPS High Speed Power Switching Power Supply Pin Description G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 100 ±25 175 -55 to 175 300 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 1200 300 210 600 300 0.25 50 A A W °C/W °C/W 2450 mJ Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 1 www.ruichips.com RU1H300Q Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1H300Q Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 100 VDS=100V, VGS=0V IDSS Zero Gate Vo...