RU1H190R

RU1H190R N-Channel Advanced Power MOSFET MOSFET Features 100V/190A, RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175°C Operating Temperature Lead Free and Green Available Applications Switching Application Systems Pin Description TO-220 TO-263 TO-220F TO-247 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2010 Rating 100 ±25 175 -55 to 175 190 ① 720 ② 190 ② 120 250 125 0.55 Unit V °C °C A A A W °C/W 1240 mJ www.ruichips.com RU1H190R Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1H190R Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 100V, ...