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VS-12TQ...PbF Series, VS-12TQ...-N3 Series
Vishay Semiconductors
Schottky Rectifier, 15 A
Base
cathode 2
TO-220AC
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF IRM max. TJ max. Diode variation
EAS
13 Cathode Anode
TO-220AC 15 A
35 V, 40 V, 45 V 0.50 V
70 mA at 125 °C 150 °C
Single die 16 mJ
FEATURES
• 150 °C TJ operation • Very low forward voltage drop • High frequency operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition (-N3 only)
DESCRIPTION The VS-12TQ... Schottky rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
Range
IFSM tp = 5 μs sine
VF 15 Apk, TJ = 125 °C TJ Range
VALUES 15
35 to 45 990 0.50
- 55 to 150
UNITS A V A V °C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS12TQ035PbF
VS12TQ035-N3
VS12TQ040PbF
VS12TQ040-N3
VS12TQ045PbF
VS12TQ045-N3
UNITS
Maximum DC reverse voltage
VR
Maximum working peak
35 35 40 40 45 45 V
reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current See fig. 5
IF(AV)
Maximum peak one cycle non-repetitive surge current See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 120 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse
VRRM applied
TJ = 25 °C, IAS = 2.4 A, L = 5.5 mH
Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES 15
990 250 16 2.4
UNITS
A
mJ A
Revision: 25-Aug-11
1 Document Number: 94137
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-12TQ...PbF Series, VS-12TQ...-N3 Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop See fig. 1
VFM (1)
Maximum reverse leakage current See fig. 2
IRM (1)
Maximum junction capacitance Typical series inductance Maximum voltage rate of change
CT LS dV/dt
Note (1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
15 A 30 A
TJ = 25 °C
15 A 30 A
TJ = 125 °C
TJ = 25 °C TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES 0.56 0.71 0.50 0.64 1.75 70 900 8.0
10 000
UNITS
V
mA pF nH V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
TJ, TStg
Maximum thermal resistance, junction to case
RthJC
DC operation See fig. 4
Typical thermal resistance, case to heatsink
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum maximum
Marking device
Case style TO-220AC
VALUES - 55 to 150
UNITS °C
2.0 °C/W
0.50
2g
0.07 oz.
6 (5) 12 (10)
kgf · cm (lbf·in)
12TQ035
12TQ040
12TQ045
Revision: 25-Aug-11
2 Document Number: 94137
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IF - Instantaneous Forward Current (A)
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VS-12TQ...PbF Series, VS-12TQ...-N3 Series
Vishay Semiconductors
1000
100
TJ = 150 °C
10
TJ = 125 °C TJ = 25 °C
1
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics
IR - Reverse Current (mA)
1000
100 TJ = 150 °C
10 TJ = 125 °C
TJ = 100 °C 1
TJ = 75 °C 0.1
TJ = 50 °C
0.01
0.001 0
TJ = 25 °C 5 10 15 20 25 30 35 40 45
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
TJ = 25 °C
CT - Junction Capacitance (pF)
100 0
10 20 30 40 50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
ZthJC - Thermal Impedance (°C/W)
1
0.1 D = 0.50 D = 0.33 D = 0.25
0.01 D = 0.17 D = 0.08
0.001 0.00001
Single pulse (thermal resistance)
P DM
t
1
t
2
Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
10
Fi.