Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR SCHOTTKY DIODE...
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR
SCHOTTKY DIODES
BAT42 BAT43
DO- 35 Glass Axial Package
General Purpose Metal to Silicon Diodes Featuring Very Low Turn-on Voltage and Fast Switching
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Repetitive Peak Reverse Voltage Forward Current (DC) Repetitive Peak Forward Current tp <1s δ <0.5 Surge Non Repetitive Forward Current tp<10ms
Power Dissipation Ta=65ºC Storage Temperature Range
Junction Temperature
Maximum Lead Temperature for Soldering during 10s at 4mm from case
SYMBOL VRRM *IF
*IFRM
*IFSM
PD Tstg Tj
TL
THERMAL RESISTANCE Junction to Ambient in free air
*Rth (j-a)
*On infinite heat sink with 4mm lead length
VALUE 30 200 500
4.0 200 - 65 to +150 - 65 to +125 230
300
ELECTRICAL CHARACTERISTICS (Tj=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Reverse Breakdown Voltage
V(BR)R
IR=100µA
Forward Voltage
**VF IF=200mA All Types
IF=10mA BAT42
IF=50mA BAT42
IF=2mA
BAT43
IF=15mA
BAT43
Reverse Current
**IR VR=25V Tj=25ºC
VR=25V Tj=100ºC
DYNAMIC CHARACTERISTICS DESCRIPTION
Diode Capacitance
SYMBOL Cd
Reverse Recovery Time When Switched From
trr
Detection Efficiency
πv
TEST CONDITION VR=1V, f=1MHz
IF=10mA to IR=10mA, measured at IRR=1mA,
RL=100Ω
RL=15KΩ , CL=300pF, f=45MHz, VI=2V
MIN MAX 30
1.0 0.40 0.65 0.26 0.33 0.45 0.5 100
MIN MAX TYP 7.0
5
80
Pulse test: tp=300µs δ <2%
BAT42_43Rev300105E
UNIT V mA mA
A mW
oC oC oC
oC/W
...