BC846BW

SMD Type TransistIoCrs NPN General Purpose Transistor BC846W,BC847W,BC848W Features Low current (max. 100 mA). Low voltage (max. 65 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Junction temperature Storage temperature Operating ambient temperature Thermal resistance from junction to ambient 1 Emitter 2 Base 3 Collector Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg Ramb Rth j-a BC846W BC847W BC848W 80 50 30 65 45 30 665 100 200 200 200 150 -65 to +150 -65 to +150 625 Unit V V V mA mA mA mW K/W www.kexin.com.cn 1 SMD Type TransistIoCrs BC846W,BC847W,BC848W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current BC846W DC current gain BC847W,BC848W BC846AW,BC847AW BC846BW,BC847BW BC847CW Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector capacitance Transition frequency Noise figure * Pulse test: tp 300µs, ä 0.02. Symbol Testconditons Min Typ Max Unit ICBO VCB = 30 V; IE = 0 15 nA ICBO VCB = 30 V; IE = 0;Tj = 150 5 ìA IEBO VEB = 5 V; IC = 0 100 nA 110 450 110 800 hFE IC = 2 mA; VCE = 5 V 110 180 220 200 290 450 420 520 800 IC = 10 mA; IB = 0.5 mA VCE(sat) IC = 100 mA; IB = 5 mA; * 90 250 mV 200 600 mV IC = 10 mA; IB = 0.5 mA VBE(sat) IC = 100 mA; IB = 5 mA;* 700 mV 900 mV IC = 2 mA; VCE = 5 V VBE IC ...