Description
This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.
Features
BVCEO > -60V IC = -1A High Continuous Collector Current ICM = -2A Peak Pulse Current RSAT = 295mΩ for a Low Equivalent On-Resistance hFE characterized up to -2A for high current gain hold up Complementary NP...
