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VS-VSKC250-08PBF Dataheets PDF



Part Number VS-VSKC250-08PBF
Manufacturers Vishay
Logo Vishay
Description Standard Recovery Diodes
Datasheet VS-VSKC250-08PBF DatasheetVS-VSKC250-08PBF Datasheet (PDF)

VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules) MAGN-A-PAK PRODUCT SUMMARY IF(AV) Type 250 A to 320 A Modules - Diode, High Voltage Package MAGN-A-PAK Circuit Two diodes doubler circuit FEATURES • High voltage • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • L.

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VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules) MAGN-A-PAK PRODUCT SUMMARY IF(AV) Type 250 A to 320 A Modules - Diode, High Voltage Package MAGN-A-PAK Circuit Two diodes doubler circuit FEATURES • High voltage • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION This new VS-VSK series of MAGN-A-PAKs uses high voltage power diodes in two basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges and the single diode module can be used in conjunction with the thyristor modules as a freewheel diode. These modules are intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required (motor drives, etc.). MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VSK.250.. IF(AV) IF(RMS) IFSM TC 50 Hz 60 Hz 250 100 393 7015 7345 50 Hz I2t 60 Hz 246 225 I2t 2460 VRRM TJ VSK.270.. 270 100 424 8920 9430 398 363 3980 400 to 3000 -40 to +150 VSK.320.. 320 100 502 10 110 10 580 511 466 5110 UNITS A °C A kA2s kA2s V °C Revision: 28-May-14 1 Document Number: 93581 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS VOLTAGE TYPE NUMBER CODE VS-VSK.250 VS-VSK.270 VS-VSK.320 VS-VSK.270 04 08 12 16 20 30 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 800 1200 1600 2000 3000 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 900 1300 1700 2100 3100 IRRM MAXIMUM AT 150 °C mA 50 FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature IF(AV) Maximum RMS forward current IF(RMS) Maximum peak, one-cycle forward, non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing Low level value of  threshold voltage High level value of threshold voltage Low level forward slope resistance High level forward slope resistance Maximum forward voltage drop I2t VF(TO)1 VF(TO)2 rf1 rf2 VFM TEST CONDITIONS VSK.250 VSK.270 VSK.320 UNITS 180° conduction, half sine wave 250 270 320 A 100 100 100 °C As AC switch 393 424 502 t = 10 ms No voltage t = 8.3 ms reapplied 7015 7345 8920 9340 10 110 10 580 A t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied Sinusoidal half wave, initial TJ = TJ maximum 5900 6180 246 225 174 159 7500 7850 398 363 281 257 8500 8900 511 466 361 330 kA2s t = 0.1 ms to 10 ms, no voltage reapplied 2460 3980 5110 kA2s (16.7 % x  x IF(AV) < I <  x IF(AV)),  TJ = TJ maximum (I >  x IF(AV)), TJ = TJ maximum 0.79 0.92 0.74 0.87 0.69 0.86 V (16.7 % x  x IF(AV) < I <  x IF(AV)),  TJ = TJ maximum (I >  x IF(AV)), TJ = TJ maximum 0.63 0.49 0.94 0.81 0.59 m 0.44 IFM =  x IF(AV), TJ = TJ maximum, 180° conduction Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2 1.29 1.48 1.28 V BLOCKING PARAMETER Maximum peak reverse leakage current RMS insulation voltage SYMBOL TEST CONDITIONS IRRM VINS TJ = 150 °C 50 Hz, circuit to base, all terminals shorted, t = 1 s VALUES 50 3000 UNITS mA V Revision: 28-May-14 2 Document Number: 93581 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS VSK.250 VSK.270 VSK.320 Maximum junction operating and storage temperature range Maximum thermal resistance,  junction to case per junction Maximum resistance, case to heatsink  per module TJ, TStg RthJC RthCS DC operation Mounting surface flat, smooth and greased -40 to +150 0.16 0.125 0.035 °C K/W Mounting torque ± 10 % MAP to heatsink busbar to MAP A mounting compound is recommended and the torque should be rechecked  after a period of about 3 hours to allo.


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