VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
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Vishay Semiconductors
Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules)
MAGN-A-PAK
PRODUCT SUMMARY
IF(AV) Type
250 A to 320 A Modules - Diode, High Voltage
Package
MAGN-A-PAK
Circuit
Two diodes doubler circuit
FEATURES
• High voltage
• Electrically isolated base plate
• 3000 VRMS isolating voltage • Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION This new VS-VSK series of MAGN-A-PAKs uses high voltage power diodes in two basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges and the single diode module can be used in conjunction with the thyristor modules as a freewheel diode. These modules are intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required (motor drives, etc.).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.250..
IF(AV) IF(RMS) IFSM
TC
50 Hz 60 Hz
250 100 393 7015 7345
50 Hz I2t
60 Hz
246 225
I2t 2460
VRRM TJ
VSK.270.. 270 100 424 8920 9430 398 363 3980
400 to 3000 -40 to +150
VSK.320.. 320 100 502
10 110 10 580
511 466 5110
UNITS A °C
A
kA2s kA2s
V °C
Revision: 28-May-14
1 Document Number: 93581
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VOLTAGE TYPE NUMBER
CODE
VS-VSK.250 VS-VSK.270 VS-VSK.320
VS-VSK.270
04 08 12 16 20 30
VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400
800
1200
1600
2000
3000
VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500
900
1300
1700
2100
3100
IRRM MAXIMUM AT 150 °C mA
50
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current at case temperature
IF(AV)
Maximum RMS forward current IF(RMS)
Maximum peak, one-cycle forward, non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level forward slope resistance High level forward slope resistance
Maximum forward voltage drop
I2t VF(TO)1 VF(TO)2
rf1 rf2 VFM
TEST CONDITIONS
VSK.250 VSK.270 VSK.320 UNITS
180° conduction, half sine wave
250 270 320 A 100 100 100 °C
As AC switch
393 424 502
t = 10 ms No voltage t = 8.3 ms reapplied
7015 7345
8920 9340
10 110 10 580
A
t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms
100 % VRRM reapplied
No voltage reapplied
100 % VRRM reapplied
Sinusoidal half wave, initial TJ = TJ maximum
5900 6180 246 225 174 159
7500 7850 398 363 281 257
8500 8900 511 466 361 330
kA2s
t = 0.1 ms to 10 ms, no voltage reapplied
2460
3980
5110 kA2s
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
0.79 0.92
0.74 0.87
0.69 0.86
V
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
0.63 0.49
0.94 0.81
0.59 m
0.44
IFM = x IF(AV), TJ = TJ maximum, 180° conduction Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
1.29
1.48
1.28
V
BLOCKING
PARAMETER Maximum peak reverse leakage current RMS insulation voltage
SYMBOL
TEST CONDITIONS
IRRM VINS
TJ = 150 °C 50 Hz, circuit to base, all terminals shorted, t = 1 s
VALUES 50
3000
UNITS mA V
Revision: 28-May-14
2 Document Number: 93581
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
VSK.250 VSK.270 VSK.320
Maximum junction operating and storage temperature range Maximum thermal resistance, junction to case per junction
Maximum resistance, case to heatsink per module
TJ, TStg RthJC RthCS
DC operation
Mounting surface flat, smooth and greased
-40 to +150 0.16 0.125
0.035
°C K/W
Mounting torque ± 10 %
MAP to heatsink busbar to MAP
A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allo.