P-Channel Power MOSFET
TSM500P02CX
20V P-Channel Power MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
Key Parameter Performance
P...
Description
TSM500P02CX
20V P-Channel Power MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
Key Parameter Performance
Parameter
Value
VDS VGS = -4.5V
RDS(on) (max) VGS = -2.5V VGS = -1.8V
-20 50 65 85
Qg 9.6
Features
● Fast Switching ● Suited for -1.8V Gate Drive Applications ● Halogen-free
Ordering Information
Part No.
Package
Packing
TSM500P02CX RFG SOT-23
3Kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Block Diagram
Unit V
mΩ
nC
Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1) Power Dissipation @ TC = 25°C Operating Junction Temperature Storage Temperature Range
TC = 25°C TC = 100°C
VDS VGS
ID
IDM PD TJ TSTG
Thermal Performance Parameter
Symbol
Thermal Resistance - Junction to Ambient
RӨJA
P-Channel MOSFET
Limit
-20 ±10 -4.7 -3 -18.8 1.56 150 -55 to +150
Unit V V A A A W °C °C
Limit 80
Unit °C/W
1/5 Version: A14
TSM500P02CX
20V P-Channel Power MOSFET
Electrical Specifications (TC = 25°C unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage
VGS = 0V, ID = -250µA VGS = -4.5V, ID = -3A VGS = -2.5V, ID = -2A VGS = -1.8V, ID = -1A VDS = VGS, ID = -250µA
BVDSS RDS(ON) VGS(TH)
-20 ...
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