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TSM480P06

Taiwan Semiconductor

P-Channel Power MOSFET

TO-220 TO-251S (IPAK) TSM480P06 60V P-Channel Power MOSFET ITO-220 TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. ...


Taiwan Semiconductor

TSM480P06

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Description
TO-220 TO-251S (IPAK) TSM480P06 60V P-Channel Power MOSFET ITO-220 TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = -10V VGS = -4.5V -60 48 65 Qg 22.4 Unit V mΩ nC Ordering Information Part No. Package Packing TSM480P06CZ C0G TO-220 50pcs / Tube TSM480P06CI C0G ITO-220 50pcs / Tube TSM480P06CH X0G TO-251S 75pcs / Tube TSM480P06CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram P-Channel MOSFE Absolute Maximum Ratings (Tc = 25°C unless otherwise noted) Parameter Symbol IPAK/DPAK Limit ITO-220 Drain-Source Voltage Gate-Source Voltage VDS -60 VGS ±20 Continuous Drain Current (Note 1) Tc = 25°C Tc = 100°C ID -20 -13 Pulsed Drain Current (Note 2) Single Pulse Avalanche Energy (Note 3) Single Pulse Avalanche Current (Note 2) IDM EAS IAS -64 51 -32 Power Dissipation @ TC = 25°C PD 40 27 Operating Junction Temperature Storage Temperature Range TJ TSTG -50 to +150 -50 to +150 TO-220 66 Unit V V A A A mJ A W °C °C 1/9 Version: D14 TSM480P06 60V P-Channel Power MOSFET Thermal Performance Parameter Symbol Limit IPAK/DPAK ITO-220 TO-220 Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient RӨJC RӨJA 3.1 4.7 1.9 62 Electrical Specifications (TC = 25°C unless otherwise noted) ...




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