P-Channel Power MOSFET
TO-220
TO-251S (IPAK)
TSM480P06
60V P-Channel Power MOSFET
ITO-220
TO-252 (DPAK)
Pin Definition: 1. Gate 2. Drain 3. ...
Description
TO-220
TO-251S (IPAK)
TSM480P06
60V P-Channel Power MOSFET
ITO-220
TO-252 (DPAK)
Pin Definition: 1. Gate 2. Drain 3. Source
Key Parameter Performance
Parameter
Value
VDS
RDS(on) (max)
VGS = -10V VGS = -4.5V
-60 48 65
Qg 22.4
Unit V mΩ
nC
Ordering Information
Part No.
Package
Packing
TSM480P06CZ C0G
TO-220
50pcs / Tube
TSM480P06CI C0G
ITO-220
50pcs / Tube
TSM480P06CH X0G
TO-251S
75pcs / Tube
TSM480P06CP ROG
TO-252 2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm
antimony compounds
Block Diagram
P-Channel MOSFE
Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)
Parameter
Symbol IPAK/DPAK
Limit ITO-220
Drain-Source Voltage Gate-Source Voltage
VDS -60 VGS ±20
Continuous Drain Current (Note 1) Tc = 25°C Tc = 100°C
ID
-20 -13
Pulsed Drain Current (Note 2) Single Pulse Avalanche Energy (Note 3) Single Pulse Avalanche Current (Note 2)
IDM EAS IAS
-64 51 -32
Power Dissipation @ TC = 25°C
PD 40 27
Operating Junction Temperature Storage Temperature Range
TJ TSTG
-50 to +150 -50 to +150
TO-220 66
Unit
V V A A A mJ A W °C °C
1/9 Version: D14
TSM480P06
60V P-Channel Power MOSFET
Thermal Performance
Parameter
Symbol
Limit IPAK/DPAK ITO-220
TO-220
Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient
RӨJC RӨJA
3.1 4.7 1.9 62
Electrical Specifications (TC = 25°C unless otherwise noted)
...
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