TSM40N03PQ56

TSM40N03PQ56 30V N-Channel Power MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 4.5 @ VGS =10V 5.8 @ VGS =4.5V ID (A) 19 16 Features ● Advanced Trench Technology ● Low On-Resistance ● Low gate charge typical @ 12nC (Typ.) ● Low Crss typical @ 140pF (Typ.) Ordering Information Part No. Package Packing TSM40N03PQ56 RLG PDFN56 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-Channel MOSFET Absolute Maximum Ratings (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage TC=25°C VGS Continuous Drain Current TC=70°C TA=25°C TA=70°C ID Drain Current-Pulsed Note 1 IDM Avalanche Current, L=0.5mH Avalanche Energy, L=0.5mH IAS, IAR EAS, EAR Maximum Power Dissipation Storage Temperature Range TC=25°C TC=70°C TA=25°C TA=70°C PD TSTG Operating Junction Temperature Range TJ * Limited by maximum junction temperature Limit 30 ±20 40 40 31 25 100 38 72 36 23 4.2 2.7 -55 to +150 -55 to +150 Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol RӨJC RӨJA Limit 3.5 30 Unit V V A A A mJ W °C °C Unit oC/W oC/W 1/4 Version: A12 TSM40N03PQ56 30V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static...