TSM250N02CX

TSM250N02CX 20V N-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS VGS = 4.5V RDS(on) (max) VGS = 2.5V VGS = 1.8V Qg 20 25 35 55 7.7 Unit V mΩ nC Ordering Information Part No. Package Packing TSM250N02CX RFG SOT-23 3kpcs / 7” Reel ● Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation @ TC = 25°C Operating Junction Temperature Storage Temperature Range TC = 25°C TC = 100°C VDS VGS ID IDM PD TJ TSTG Thermal Performance Parameter Symbol Thermal Resistance - Junction to Ambient RӨJA N-Channel MOSFET Limit 20 ±10 5.8 3.7 23.2 1.56 150 -55 to +150 Limit 80 Unit V V A A A W °C °C Unit °C/W 1/5 Version: A14 TSM250N02CX 20V N-Channel Power MOSFET Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage VGS = 0V, ID = 250µA VGS = 4.5V, ID = 4A VGS = 2.5V, ID = 3A VGS = 1.8V, ID = 2A VDS = VGS, ID = 250µA BVDSS RDS(on) VGS(TH) 20 -- -- V -- 20 25 -- 27 35 mΩ -- 39 55 0.4 0.6 0.8 V Zero Gate Voltage Drain Current Gate Bod...