30V N-Channel Power MOSFET
TSM240N03CX
30V N-Channel Power MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
Note: MSL 1 (Moisture Sensiti...
Description
TSM240N03CX
30V N-Channel Power MOSFET
SOT-23
Pin Definition: 1. Gate 2. Source 3. Drain
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
Key Parameter Performance
Parameter
Value
VDS
30
VGS = 10V
24
RDS(on) (max)
VGS = 4.5V
34
Qg
4.1
Unit
V mΩ nC
Ordering Information
Ordering code Package
Packing
TSM240N03CX RFG SOT-23
3kpcs / 7” Reel
● Note: Halogen-free according to IEC 61249-2-21 definition
Block Diagram
Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Power Dissipation @ TC = 25°C Operating Junction Temperature Storage Temperature Range
TC = 25°C TC = 100°C
VDS VGS
ID
IDM EAS PD TJ TSTG
Thermal Performance Parameter
Symbol
Thermal Resistance - Junction to Ambient
RӨJA
N-Channel MOSFET
Limit
30 ±20 6.5 4.1 26 32 1.56 150 -55 to +150
Limit
80
Unit
V V A A A mJ W °C °C
Unit
°C/W
1/5
Version: B1811
TSM240N03CX
30V N-Channel Power MOSFET
Electrical Specifications (TC = 25°C unless otherwise noted)
Parameter
Conditions
Symbol
Static
Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage
VGS = 0V, ID = 250µA VGS = 10V, ID = 6A VGS = 4.5V, ID = 4A VDS = VGS, ID = 250µA
BVDSS RDS(on) VGS(TH)
VDS = 30V, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, TJ = 125°C
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
Forward Transcondu...
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