TSM210N06

TO-220 Pin Definition: 1. Gate 2. Drain 3. Source TSM210N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 3.1 @ VGS =10V ID (A) 210 Features ● Advanced Trench Technology ● Low RDS(ON) 3.1mΩ (Max.) ● Low gate charge typical @ 160nC (Typ.) ● Low Crss typical @ 300pF (Typ.) Ordering Information Part No. TSM210N06CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current TC=70°C TA=25°C ID TA=70°C Drain Current-Pulsed Note 1 IDM Avalanche Current, L=0.3mH IAS, IAR Avalanche Energy, L=0.3mH EAS, EAR TC=25°C Maximum Power Dissipation TC=70°C TA=25°C PD TA=70°C Storage Temperature Range TSTG Operating Junction Temperature Range TJ * Limited by maximum junction temperature Limit 60 ±20 210 170 19 15.2 650 113 1900 250 160 2 1.3 -55 to +150 -55 to +150 Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol RӨJC RӨJA Limit 0.5 62.5 Unit V V A A A mJ W °C °C Unit oC/W oC/W 1/4 Version: A12 TSM210N06 60V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage...