Dual N-Channel MOSFET
TSM200N03D
Taiwan Semiconductor
FEATURES
● Fast switching ● 100% avalanche tested ● Pb-free plating ● RoHS compliant ● ...
Description
TSM200N03D
Taiwan Semiconductor
FEATURES
● Fast switching ● 100% avalanche tested ● Pb-free plating ● RoHS compliant ● Halogen-free package
APPLICATION
● Power Supply ● Motor COntrol
Dual N-Channel MOSFET
30V, 20A, 20mΩ
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
RDS(on) (max)
VGS = -10V VGS = -4.5V
Qg
30 20 30 4.1
V mΩ nC
PDFN33 Dual
Notes: Moisture sensitivity level: level 3. Per J-STD-020
Dual N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)
TC = 25°C TC = 100°C
Total Power Dissipation @ TC = 25°C Single Pulsed Avalanche Energy (Note 3) Single Pulsed Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS VGS
ID
IDM PDTOT EAS
IAS TJ, TSTG
30 ±20 20 13 80 20 14 17 - 55 to +150
UNIT V V
A
A W mJ A °C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
6.4 °C/W
Junction to Ambient Thermal Resistance
RӨJA
62 °C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air
Document Number:DS_P0000166
1
Version: A15
TSM200N03D
Taiwan Semiconductor
ELEC...
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