TSM180N03CS

TSM180N03CS 30V N-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = 10V VGS = 4.5V 30 18 28 Qg 4.1 Unit V mΩ nC Ordering Information Part No. Package Packing TSM180N03CS RLG SOP-8 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram Absolute Maximum Ratings (Tc=25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Power Dissipation @ TC = 25oC Tc=25ºC Tc=100ºC ID IDM EAS PD Operating Junction Temperature TJ Storage Temperature Range TSTG Thermal Performance Parameter Symbol Thermal Resistance - Junction to Ambient RӨJA N-Channel MOSFET Limit 30 ±20 9 5.7 36 32 2.5 150 -55 to +150 Limit 50 Unit V V A A A mJ W ºC oC Unit oC/W 1/5 Version: A14 TSM180N03CS 30V N-Channel Power MOSFET Electrical Specifications (TJ=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance (Note 3) Dynamic Total Gate Charge (Note 3,4) Gate-Source Charge (Note 3,4) ...