TSM120N10PQ56

TSM120N10PQ56 100V N-Channel MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit VDS RDS(on)(max) 100 12 V mΩ Qg 145 nC Features ● Low On-Resistance ● Low Input Capacitance ● Low Gate Charge Ordering Information Part No. Package Packing TSM120N10PQ56 RLG PDFN56 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Block Diagram N-Channel MOSFET Absolute Maximum Ratings (Tc=25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Drain Current-Pulsed (Note 1) Single Pulse Avalanche Energy, L=0.5mH Maximum Power Dissipation (Note 2) Storage Temperature Range Operating Junction Temperature Range TC=25°C TA=25°C TC=25°C TA=25°C VDS VGS ID IDM EAS PD TSTG TJ Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient RӨJC RӨJA Limit 100 ±20 58 16.1 150 156 36 2 -55 to +150 -55 to +150 Limit 1.2 62 Unit V V A A mJ W °C °C Unit oC/W oC/W 1/6 Version: A14 TSM120N10PQ56 100V N-Channel MOSFET Electrical Specifications (TJ=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Vo...