TSM060N03CP

TSM060N03CP 30V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = 10V VGS = 4.5V 30 6 9 Qg 11.1 Unit V mΩ nC Ordering Information Part No. Package Packing TSM060N03CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram Absolute Maximum Ratings (TC=25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current (Note 1) TC=25ºC TC=100ºC Single Pulse Avalanche Energy (Note 2) Single Pulse Avalanche Current (Note 2) Total Power Dissipation @ TC=25oC Derate above TC=25oC ID IDM EAS IAS PD Operating Junction Temperature TJ Storage Temperature Range TSTG Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Symbol RӨJC RӨJA N-Channel MOSFET Limit 30 ±20 80 51 320 88 42 54 0.43 150 -55 to +150 Limit 2.3 62 Unit V V A A A mJ A W W/ºC ºC oC Unit oC/W oC/W 1/5 Version: A14 TSM060N03CP 30V N-Channel Power MOSFET Electrical Specifications (TC=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance VGS = 0V, ID = 250µA VGS = 10V, ID = 20A VGS = 4.5V, ID = 10A BVDSS 30 -- -- V...