TSM042N03CS

TSM042N03CS 30V N-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = 10V VGS = 4.5V 30 4.2 6 Qg 24 Unit V mΩ nC Ordering Information Part No. Package Packing TSM042N03CS RLG SOP-8 2.5kps / 13’’ Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram Absolute Maximum Ratings (Tc=25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Single Pulse Avalanche Current (Note 2) Power Dissipation @ TC = 25oC Tc=25ºC Tc=100ºC VGS ID IDM EAS IAS PD Operating Junction Temperature TJ Storage Temperature Range TSTG Thermal Performance Parameter Symbol Thermal Resistance - Junction to Ambient RӨJA N-Channel MOSFET Limit 30 ±20 30 19 120 125 50 7 175 -55 to +175 Limit 62 Unit V V A A A mJ A W ºC oC Unit oC/W 1/5 Version: A14 TSM042N03CS 30V N-Channel Power MOSFET Electrical Specifications (TJ=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance VGS = 0V, ID = 250µA VGS = 10V, ID = 12A VGS = 4.5V, ID = 6A BVDSS 30 -- -- V -- 3.8 4.2 RDS(ON) mΩ 5.2 6 Gate Threshold ...