Document
BC857BS
PNP GENERAL PURPOSE DUALTRANSISTORS
VOLTAGE 45 Volts
POWER 150 mWatts
FEATURES
• General purpose amplifier applications • NPN epitaxial silicon, planar design • In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-363, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.008 gram • Marking : 57S
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous
THERMAL CHARACTERISTICS
PARAMETER Total Device Dissipation Per Device FR-5 Board (Note 1)T =25OC
A
Derate above 25OC Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature
Note 1: FR-4 board 70 x 60 x 1mm. REV.0.1-MAR.4.2009
Symbol VCEO VCBO VEBO IC
Value -45 -50 -5.0 100
Units V V V
mA
Symbol P
D
RθJA TJ TSTG
Value 300 150 3.0 328
-55 to 150
-55 to 150
Units mW mW/OC O C/W
OC
OC
PAGE . 1
BC857BS
ELECTRICAL CHARACTERISTICS (TJ=25OC, unless otherwise noted)
PA RA ME TE R
OF F C HA RA C TE RIS TIC S Collector - Emitter Breakdown Voltage Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cutoff Current
ON C HA RA C TE RIS TIC S
S ym b o l
Te s t C o nd i t i o n
V ( B R ) C E O IC = 1 0 m A
V ( B R ) C E S IC =1 0 uA , V E B =0
V ( B R ) C B O IC = 1 0 uA
V ( B R ) E B O IE = 1 0 uA
IC B O
VC B =30V, VC B =30V, TA =150O C
MIN. TYP. MA X . Uni t
-45 - - V
-50 -
-
-50 - - V
-5.0
-
-
V
-
-
-15 -5.0
nA uA
DC Current Gain
hF E
IC =1 0 uA , V C E =5 V
200 420
150
-
-
DC Current Gain
h FE
I =2.0mA, V =5V C CE
Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base - Emitter Voltage
VC E (S AT) VB E (S AT) VB E (S AT)
IC =1 0 mA , IB =0 .5 mA IC =1 0 0 mA , IB =5 .0 mA
IC =1 0 mA , IB =0 .5 mA IC =1 0 0 mA , IB =5 .0 mA
IC =2 mA , V C E =5 .0 V IC =1 0 mA , V C E =5 .0 V
S MA L L -S IGNA L C HA RA C TE RIS TIC S
-
150
475 800
-
-
-
-580 -
- -0.25 - -0.6
-0.7 -0.9
-
-660 -700 - -770
V V mV
Current-Gain-Bandwidth Product Output Capacitance Noise Figure
fT IC =1 0 mA ,V C E =5 .0 V d c ,f=1 0 0 MHZ 1 0 0 -
- MHZ
Cobo NF
VC B =10V,f=1.0MHZ
IC =0 .2 mA ,V C E =5 .0 V d c , RS =2.0kΩ,f=1.0kHZ , BW=200HZ
- - 4.5 pF - - 10 dB
REV.0.1-MAR.4.2009
654
12 3
Fig.53
PAGE . 2
hFE, NORMALIZED DC CURRENT GAIN
BC857BS
ELECTRICAL CHARACTERISTICS CURVE
2.0
1.5 VCE=10V TA=25OC
1.0 0.8
0.6
0.4 0.3
0.2 0.2
0.5 1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT(mAdc)
Figure 1. Normalized DC Current Gain
2.0
TA=25OC
1.6
200mA
1.2
IC= IC=
50mA
10mA 20mA
0.8
100mA
0.4
0 0.02
0.1 1.0
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
10 20
qVB, TEMPERATURE COEFFICIENT (mA/OC)
V, VOLTAGE (VOLTS)
1.0
TA=25OC
0.8
VBE(sat) @ IC/IB=10
0.6 VBE(on) @ VCE=10V
0.4
0.2
VCE(sat) @ IC/IB=10
0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT(mAdc) Figure 2. "Sat.