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BC857BS Dataheets PDF



Part Number BC857BS
Manufacturers Pan Jit International
Logo Pan Jit International
Description PNP GENERAL PURPOSE DUALTRANSISTORS
Datasheet BC857BS DatasheetBC857BS Datasheet (PDF)

BC857BS PNP GENERAL PURPOSE DUALTRANSISTORS VOLTAGE 45 Volts POWER 150 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-363, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.008 gram • Marking : 57S ABSOLUTE MAXIMUM RATINGS PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Contin.

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BC857BS PNP GENERAL PURPOSE DUALTRANSISTORS VOLTAGE 45 Volts POWER 150 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-363, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.008 gram • Marking : 57S ABSOLUTE MAXIMUM RATINGS PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous THERMAL CHARACTERISTICS PARAMETER Total Device Dissipation Per Device FR-5 Board (Note 1)T =25OC A Derate above 25OC Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature Note 1: FR-4 board 70 x 60 x 1mm. REV.0.1-MAR.4.2009 Symbol VCEO VCBO VEBO IC Value -45 -50 -5.0 100 Units V V V mA Symbol P D RθJA TJ TSTG Value 300 150 3.0 328 -55 to 150 -55 to 150 Units mW mW/OC O C/W OC OC PAGE . 1 BC857BS ELECTRICAL CHARACTERISTICS (TJ=25OC, unless otherwise noted) PA RA ME TE R OF F C HA RA C TE RIS TIC S Collector - Emitter Breakdown Voltage Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cutoff Current ON C HA RA C TE RIS TIC S S ym b o l Te s t C o nd i t i o n V ( B R ) C E O IC = 1 0 m A V ( B R ) C E S IC =1 0 uA , V E B =0 V ( B R ) C B O IC = 1 0 uA V ( B R ) E B O IE = 1 0 uA IC B O VC B =30V, VC B =30V, TA =150O C MIN. TYP. MA X . Uni t -45 - - V -50 - - -50 - - V -5.0 - - V - - -15 -5.0 nA uA DC Current Gain hF E IC =1 0 uA , V C E =5 V 200 420 150 - - DC Current Gain h FE I =2.0mA, V =5V C CE Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base - Emitter Voltage VC E (S AT) VB E (S AT) VB E (S AT) IC =1 0 mA , IB =0 .5 mA IC =1 0 0 mA , IB =5 .0 mA IC =1 0 mA , IB =0 .5 mA IC =1 0 0 mA , IB =5 .0 mA IC =2 mA , V C E =5 .0 V IC =1 0 mA , V C E =5 .0 V S MA L L -S IGNA L C HA RA C TE RIS TIC S - 150 475 800 - - - -580 - - -0.25 - -0.6 -0.7 -0.9 - -660 -700 - -770 V V mV Current-Gain-Bandwidth Product Output Capacitance Noise Figure fT IC =1 0 mA ,V C E =5 .0 V d c ,f=1 0 0 MHZ 1 0 0 - - MHZ Cobo NF VC B =10V,f=1.0MHZ IC =0 .2 mA ,V C E =5 .0 V d c , RS =2.0kΩ,f=1.0kHZ , BW=200HZ - - 4.5 pF - - 10 dB REV.0.1-MAR.4.2009 654 12 3 Fig.53 PAGE . 2 hFE, NORMALIZED DC CURRENT GAIN BC857BS ELECTRICAL CHARACTERISTICS CURVE 2.0 1.5 VCE=10V TA=25OC 1.0 0.8 0.6 0.4 0.3 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT(mAdc) Figure 1. Normalized DC Current Gain 2.0 TA=25OC 1.6 200mA 1.2 IC= IC= 50mA 10mA 20mA 0.8 100mA 0.4 0 0.02 0.1 1.0 IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region 10 20 qVB, TEMPERATURE COEFFICIENT (mA/OC) V, VOLTAGE (VOLTS) 1.0 TA=25OC 0.8 VBE(sat) @ IC/IB=10 0.6 VBE(on) @ VCE=10V 0.4 0.2 VCE(sat) @ IC/IB=10 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT(mAdc) Figure 2. "Sat.


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