Document
MCC R
Micro Commercial Components
Micro Commercial Components 130 W Cochran St, Unit B
Simi Valley, CA 93065
Tel:818-701-4933
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)
x Ideally Suited for Automatic Insertion x Ultra-Small Surface Mount Package • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix "-HF"
Mechanical Data
x Case: SOT-363, Molded Plastic x MAKING: 7P / 1K
Maximum Ratings @ 25к Unless Otherwise Specified
Symbol
Parameter
Value
OFF CHARACTERISTICS
IC Collector Current
100
ICM Peak Collector Current
200
Pd Power Dissipation @ Ts=50к
200
TJ, TSTG
Operating & Storage Temperature
-55~+150
Units
mAdc mAdc mW
к
BC847PN
PNP and NPN Small Signal Transistor 200mW
SOT-363
G
6 54
BC
12
3
A H
KM J
D
L
DIMENSIONS
INCHES
MM
DIM MIN
MAX MIN MAX NOTE
A
.006
.014
0.15
0.35
B
.045
.053
1.15
1.35
C .079 .096 2.00 2.45
D .026
0.65Nominal
G
.047
.055
1.20
1.40
H
.071
.087
1.80
2.20
J --- .004 --- 0.10
K
.035
.043
0.90
1.10
L
.010
.018
0.26
0.46
M
.003
.006
0.08
0.15
Revision: D
www.mccsemi.com
1 of 5
2018/07/26
MCC R
Micro Commercial Components
CHARACTERISTICS of NPN Transistor (Tamb=25Я unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance Transition frequency Noise figure
Symbol Test conditions
V(BR)CBO Ic=10µA,IE=0
V(BR)CEO Ic=10mA,IB=0
V(BR)EBO IE=1µA,IC=0
ICBO
VCB=30V,IE=0
IEBO VEB=5V,IC=0
hFE1
VCE=5V,IC=2mA
VCE(sat) IC=10mA,IB=0.5mA
VCE(sat) IC=100mA,IB=5mA
VBE(sat) IC=10mA,IB=0.5mA
VBE(sat) IC=100mA,IB=5mA
VBEon VCE=5V,IC=2mA
VBEon VCE=5V,IC=10mA
Cob VCB=10V,IE=0,f=1MHz
fT VCE=5V,IC=10mA,f=100MHz VCE=5V,Ic=0.2mA,
NF f=1kHZ,Rg=2Kȍ,¨f=200Hz
MIN TYP MAX UNIT 50 V 45 V 6V
15 nA 100 nA 200 450 0.25 V 0.6 V 0.7 V 0.9 V 0.58 0.7 V 0.72 V 6.0 pF 100 MHz
10 dB
CHARACTERISTICS of PNP Transistor (Tamb=25Я unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance Transition frequency Noise figure
Symbol Test conditions
MIN TYP MAX UNIT
V(BR)CBO Ic=-10µA,IE=0
-50
V
V(BR)CEO Ic=-10mA,IB=0
-45
V
V(BR)EBO IE=-1µA,IC=0
-5 V
ICBO VCB=-30V,IE=0
-15 nA
IEBO VEB=-5V,IC=0
-100 nA
hFE1 VCE=-5V,IC=-2mA
220 475
VCE(sat) IC=-10mA,IB=-0.5mA
-0.3 V
VCE(sat) IC=-100mA,IB=-5mA
-0.65 V
VBE(sat) IC=-10mA,IB=-0.5mA
-0.7 V
VBE(sat) IC=-100mA,IB=-5mA
-0.95 V
VBEon VCE=-5V,IC=-2mA
-0.6 -0.75 V
VB.