BC847PN

Elektronische Bauelemente RoHS Compliant Product FEATURE  Epitaxial Die Construction  Two internal isolated NPN/PNP transistors in one package  Power Dissipation PCM : 0.2 W (Temp. = 25˚C)  Collector Current ICM : 0.1A  Collector-base Voltage V(BR)CBO : 50/-50 V  Operating & Storage Junction Temperature TJ, TSTG : -55˚C~+150˚C MARKING    C1 B2 E2 7P BC847PN NPN - PNP Silicon Multi-Chip Transistor SOT-363    E1 B1 C2 ABSOLUTE MAXIMUM RATINGS OF TR1 at Ta = 25°C PARAMETER SYMBOL VALUE Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent – Continuous Collector Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 50 45 6 100 200 150 -55 ~ +150 ELECTRICAL CHARACTERISTICS OF TR1 (NPN Transister) at Ta = 25°C CHARACTERISTIC TEST CONDITION SYMBOL MIN. TYP. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Collector Output Capacitance Transition Frequency Noise Figure IC=10μA, IE=0 IC = 10 mA, IB = 0 IE=1μA, IC=0 VCB=30V, IE=0 VEB=5V, IC=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, VCE=5V IC=10mA, VCE=5V VCB=10V, IE=0, f=1MHz VCE=5V, IC=10mA, f=100MHz VCE=5V, IC=0.2mA, f=1kHz Rg=2KΩ, △f=200Hz V(BR)CBO V(BR)CEO V(BR...