LOW LEAKAGE DOUBLE DIODE
BAV199W
LOW LEAKAGE DOUBLE DIODE
For low leakage current applications
Feature • Very low leakage current • Medium speed ...
Description
BAV199W
LOW LEAKAGE DOUBLE DIODE
For low leakage current applications
Feature Very low leakage current Medium speed switching times
3 12
Marking Code: JY
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Repetitive Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Single Diode Double Diode
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
at t = 1 µs at t = 1 ms at t = 1 s
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
Symbol VRRM VR IF IFRM
IFSM
Pd RθJA Tj, Tstg
Value
85
85 160 140 500
4 1 0.5 250
625
- 65 to + 150
Unit V V mA mA
A
mW OC/W
OC
Characteristics at Ta = 25 OC
Parameter
Reverse Breakdown Voltage at IR = 100 µA Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA
Reverse Current at VR = 75 V at VR = 75 V, Tj = 150 OC
Total Capacitance at VR = 0, f = 1 MHz
Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR, RL = 100 Ω
Symbol V(BR)R
VF
IR IR CT
trr
Min.
85
-
-
-
-
Max.
-
0.9 1 1.1 1.25
5 80
2
3
Unit V
V
nA pF µs
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/09/2008
BAV199W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/09/2008
...
Similar Datasheet