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2DB1689

Diodes

PNP SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Ideal for Low Power Amplificat...


Diodes

2DB1689

File Download Download 2DB1689 Datasheet


Description
Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideal for Low Power Amplification and Switching Complementary NPN Type Available (2DD2652) Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) "Green Device" (Note 2) 2DB1689 LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Mechanical Data Case: SOT-323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) C NEW PRODUCT Top View Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current BE Device Schematic Symbol VCBO VCEO VEBO IC ICM Value -15 -12 -6 -1.5 -3 Unit V V V A A Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA PD RθJA TJ, TSTG Value 300 417 500 250 -55 to +150 Unit mW °C/W mW °C/W °C Electrical Characteristics @TA = 25°C un...




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