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VS-22RIA10 Dataheets PDF



Part Number VS-22RIA10
Manufacturers Vishay
Logo Vishay
Description Medium Power Phase Control Thyristors
Datasheet VS-22RIA10 DatasheetVS-22RIA10 Datasheet (PDF)

www.vishay.com VS-22RIA Series Vishay Semiconductors Medium Power Phase Control Thyristors (Stud Version), 22 A TO-208AA (TO-48) PRODUCT SUMMARY Package Diode variation IT(AV) VDRM/VRRM VTM IGT TJ TO-208AA (TO-48) Single SCR 22 A 100 V to 1200 V 1.70 V 60 mA -65 °C to 125 °C FEATURES • Improved glass passivation for high reliability and exceptional stability at high temperature • High dI/dt and dV/dt capabilities • Standard package • Low thermal resistance • Metric threads version availabl.

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www.vishay.com VS-22RIA Series Vishay Semiconductors Medium Power Phase Control Thyristors (Stud Version), 22 A TO-208AA (TO-48) PRODUCT SUMMARY Package Diode variation IT(AV) VDRM/VRRM VTM IGT TJ TO-208AA (TO-48) Single SCR 22 A 100 V to 1200 V 1.70 V 60 mA -65 °C to 125 °C FEATURES • Improved glass passivation for high reliability and exceptional stability at high temperature • High dI/dt and dV/dt capabilities • Standard package • Low thermal resistance • Metric threads version available • Types up to 1200 V VDRM/VRRM • Designed and qualified for industrial and consumer level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • Medium power switching • Phase control applications • Can be supplied to meet stringent military, aerospace and other high reliability requirements MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) IT(RMS) ITSM I2t VDRM/VRRM tq TJ TC 50 Hz 60 Hz 50 Hz 60 Hz Typical VALUES 22 85 35 400 420 793 724 100 to 1200 110 -65 to 125 UNITS A °C A A A2s V μs °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE (1) V 10 100 20 200 VS-22RIA 40 60 400 600 80 800 100 1000 120 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE (2) V 150 300 500 700 900 1100 1300 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 20 10 Notes (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs (2) For voltage pulses with tp  5 ms Revision: 11-Mar-14 1 Document Number: 93700 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-22RIA Series Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM Maximum I2t for fusing I2t Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL TEST CONDITIONS 180° sinusoidal conduction t = 10 ms No voltage t = 8.3 ms reapplied t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, initial TJ =TJ maximum t = 10 ms 100 % VRRM t = 8.3 ms reapplied t = 0.1 to 10 ms, no voltage reapplied, TJ = TJ maximum (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (I >  x IT(AV)), TJ = TJ maximum (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (I >  x IT(AV)), TJ = TJ maximum Ipk = 70 A, TJ = 25 °C TJ = 25 °C, anode supply 6 V, resistive load VALUES 22 85 35 400 420 335 355 793 724 560 515 7930 0.83 0.95 14.9 13.4 1.70 130 200 UNITS A °C A A A2s A2s V m V mA SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum rate of rise of turned-on current Typical turn-on time VDRM  600 V VDRM  800 V VDRM  1000 V VDRM  1600 V Typical reverse recovery time Typical turn-off time dI/dt tgt trr tq TJ = TJ maximum, VDM = Rated VDRM Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum ITM = (2 x rated dI/dt) A TJ = 25 °C, at rated VDRM/VRRM, TJ = 125 °C TJ = TJ maximum, ITM = IT(AV), tp > 200 μs,  dI/dt = - 10 A/μs TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, VR = 100 V, dI/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % VDRM, gate bias 0 V to 100 W 200 180 160 150 0.9 4 110 Note • tq = 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request UNITS A/μs μs BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 100 % rated VDRM TJ = TJ maximum linear to 67 % rated VDRM Note (1) Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 22RIA120S90 VALUES 100 300 (1) UNITS V/μs Revision: 11-Mar-14 2 Document Number: 93700 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-22RIA Series Vishay Semiconductors TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM -VGM IGT VGT IGD VGD TEST CONDITIONS VALUES T.


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