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VS-ST173C12CFK0 Dataheets PDF



Part Number VS-ST173C12CFK0
Manufacturers Vishay
Logo Vishay
Description Inverter Grade Thyristors
Datasheet VS-ST173C12CFK0 DatasheetVS-ST173C12CFK0 Datasheet (PDF)

www.vishay.com VS-ST173C Series Vishay Semiconductors Inverter Grade Thyristors (Hockey PUK Version), 330 A TO-200AB (A-PUK) PRODUCT SUMMARY Package Diode variation IT(AV) VDRM/VRRM VTM ITSM at 50 Hz ITSM at 60 Hz IGT TC/Ths TO-200AB (A-PUK) Single SCR 330 A 1000 V, 1200 V 2.07 V 4680 A 4900 A 200 mA 55 °C FEATURES • Metal case with ceramic insulator • All diffused design • Center amplifying gate • Guaranteed high dV/dt • International standard case TO-200AB (A-PUK) • Guaranteed high dI/dt.

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www.vishay.com VS-ST173C Series Vishay Semiconductors Inverter Grade Thyristors (Hockey PUK Version), 330 A TO-200AB (A-PUK) PRODUCT SUMMARY Package Diode variation IT(AV) VDRM/VRRM VTM ITSM at 50 Hz ITSM at 60 Hz IGT TC/Ths TO-200AB (A-PUK) Single SCR 330 A 1000 V, 1200 V 2.07 V 4680 A 4900 A 200 mA 55 °C FEATURES • Metal case with ceramic insulator • All diffused design • Center amplifying gate • Guaranteed high dV/dt • International standard case TO-200AB (A-PUK) • Guaranteed high dI/dt • High surge current capability • Low thermal impedance • High speed performance • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • Inverters • Choppers • Induction heating • All types of force-commutated converters    MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) IT(RMS) ITSM I2t VDRM/VRRM tq TJ Ths Ths 50 Hz 60 Hz 50 Hz 60 Hz Range VALUES 330 55 610 25 4680 4900 110 100 1000 to 1200 15 to 30 -40 to 125 UNITS A °C A °C A kA2s V μs °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VS-ST173C..C 10 12 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 1100 1300 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 40 Revision: 16-Dec-13 1 Document Number: 94366 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com CURRENT CARRYING CAPABILITY FREQUENCY 50 Hz 400 Hz 1000 Hz 2500 Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current dI/dt Heatsink temperature Equivalent values for RC circuit ITM 180° el 760 660 730 590 600 490 350 270 50 VDRM 50 40 55 47/0.22 VS-ST173C Series Vishay Semiconductors ITM 180° el 1200 1030 1260 1080 1200 1030 850 720 50 VDRM - 40 55 47/0.22 ITM 100 µs 5570 4920 2800 2460 1620 1390 800 680 50 VDRM - 40 55 47/0.22 UNITS A V A/μs °C μF ON-STATE CONDUCTION PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current Maximum peak, one half cycle,  non-repetitive surge current SYMBOL IT(AV) IT(RMS) ITSM Maximum I2t for fusing I2t Maximum I2t for fusing Maximum peak on-state voltage Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current I2t VTM VT(TO)1 VT(TO)2 rt1 rt2 IH IL TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms No voltage  t = 8.3 ms reapplied t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms 100 % VRRM reapplied No voltage  reapplied Sinusoidal half wave, initial TJ = TJ.


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