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VSKU105-12P Dataheets PDF



Part Number VSKU105-12P
Manufacturers Vishay
Logo Vishay
Description ADD-A-PAK Generation VII Power Modules
Datasheet VSKU105-12P DatasheetVSKU105-12P Datasheet (PDF)

www.vishay.com VSKU105.., VSKV105.. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Thyristor, 105 A ADD-A-PAK PRODUCT SUMMARY IT(AV) 105 A Type Modules - Thyristor, Standard MECHANICAL DESCRIPTION The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with min.

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www.vishay.com VSKU105.., VSKV105.. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Thyristor, 105 A ADD-A-PAK PRODUCT SUMMARY IT(AV) 105 A Type Modules - Thyristor, Standard MECHANICAL DESCRIPTION The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. FEATURES • High voltage • Industrial standard package • UL approved file E78996 • Low thermal resistance • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate • Up to 1600 V • High surge capability • Easy mounting on heatsink ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IT(AV) 85 °C IT(RMS) ITSM 50 Hz 60 Hz 50 Hz I2t 60 Hz I2t VRRM TStg TJ Range VALUES 105 165 2000 2094 20 18.26 200 400 to 1600 -40 to 130 -40 to 130 UNITS A kA2s kA2s V °C °C Revision: 14-Jan-14 1 Document Number: 94656 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VSKU105.., VSKV105.. Series Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VSK.105 04 08 12 16 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 800 1200 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 900 1300 1700 VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 400 800 1200 1600 IRRM, IDRM AT 130 °C mA 15 ON-STATE CONDUCTION PARAMETER Maximum average on-state current SYMBOL IT(AV) Maximum continuous RMS on-state current IT(RMS) Maximum peak, one-cycle non-repetitive on-state current ITSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t (1) Maximum value of threshold voltage VT(TO) (2) Maximum value of on-state  slope resistance Maximum on-state voltage drop Maximum non-repetitive rate of rise of turned on current Maximum holding current Maximum latching current Notes (1) I2t for time tx = I2t x tx (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (3) 16.7 % x  x IAV < I <  x IAV (4) I >  x IAV rt (2) VTM dI/dt IH IL TEST CONDITIONS 180° conduction, half sine wave, TC = 85 °C DC TC t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied Sinusoidal half wave, initial TJ = TJ maximum t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied Initial TJ = TJ maximum t = 0.1 ms to 10 ms, no voltage reapplied  TJ = TJ maximum Low level (3) High level (4) TJ = TJ maximum Low level (3) High level (4) TJ = TJ maximum ITM =  x IT(AV) TJ = 25 °C TJ = 25 °C, from 0.67 VDRM, ITM =  x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit TJ = 25 °C, anode supply = 6 V, resistive load VALUES 105 165 78 2000 2094 1682 1760 20 18.26 14.14 12.91 200 0.98 1.12 2.7 2.34 1.8 150 250 400 UNITS A °C A kA2s kA2s V m V A/μs mA Revision: 14-Jan-14 2 Document Number: 94656 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VSKU105.., VSKV105.. Series Vishay Semiconductors TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum gate voltage required to trigger Maximum gate current required to trigger Maximum gate voltage that will not trigger Maximum gate current that will not trigger SYMBOL PGM PG(AV) IGM - VGM VGT IGT VGD IGD TEST CONDITIONS TJ = - 40 °C TJ = 25 °C TJ = 125 °C Anode supply = 6 V resistive load TJ = - 40 °C TJ = 25 °C TJ = 125 °C Anode supply = 6 V resistive load TJ = 125 °C, rated VDRM applied TJ = 125 °C, rated VDRM applied VALUES 12 3.0 3.0 10 4.0 2.5 1.7 270 150 80 0.25 6 UNITS W A V mA V mA BLOCKING PARAMETER Maximum peak reverse and off-state  leakage current at VRRM, VDRM SYMBOL IRRM, IDRM TEST CONDITIONS TJ = 130 °C, gate open circuit Maximum RMS insulation voltage VINS 50 Hz Maximum critical rate of rise of off-state voltage dV/dt TJ = 1.


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