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VSKU105.., VSKV105.. Series
Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules Thyristor/Thyristor, 105 A
ADD-A-PAK
PRODUCT SUMMARY
IT(AV)
105 A
Type
Modules - Thyristor, Standard
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces.
FEATURES • High voltage • Industrial standard package • UL approved file E78996 • Low thermal resistance • Designed and qualified for industrial level • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS • Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate • Up to 1600 V • High surge capability • Easy mounting on heatsink
ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IT(AV)
85 °C
IT(RMS)
ITSM
50 Hz 60 Hz
50 Hz I2t
60 Hz
I2t
VRRM TStg TJ
Range
VALUES 105 165 2000 2094 20 18.26 200
400 to 1600 -40 to 130 -40 to 130
UNITS
A
kA2s kA2s
V °C °C
Revision: 14-Jan-14
1 Document Number: 94656
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VSKU105.., VSKV105.. Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE
VSK.105
04 08 12 16
VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
V
400
800
1200
1600
VRSM, MAXIMUM NON-REPETITIVE PEAK
REVERSE VOLTAGE V
500
900
1300
1700
VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT V
400
800
1200
1600
IRRM, IDRM AT 130 °C
mA
15
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
SYMBOL IT(AV)
Maximum continuous RMS on-state current
IT(RMS)
Maximum peak, one-cycle non-repetitive on-state current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t (1)
Maximum value of threshold voltage
VT(TO) (2)
Maximum value of on-state slope resistance
Maximum on-state voltage drop Maximum non-repetitive rate of rise of turned on current
Maximum holding current
Maximum latching current
Notes (1) I2t for time tx = I2t x tx (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (3) 16.7 % x x IAV < I < x IAV (4) I > x IAV
rt (2) VTM dI/dt
IH IL
TEST CONDITIONS
180° conduction, half sine wave, TC = 85 °C DC
TC t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms
No voltage reapplied
100 % VRRM reapplied
Sinusoidal half wave, initial TJ = TJ maximum
t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms
No voltage reapplied
100 % VRRM reapplied
Initial TJ = TJ maximum
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
Low level (3) High level (4)
TJ = TJ maximum
Low level (3) High level (4)
TJ = TJ maximum
ITM = x IT(AV) TJ = 25 °C
TJ = 25 °C, from 0.67 VDRM, ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit
TJ = 25 °C, anode supply = 6 V, resistive load
VALUES
105
165 78 2000 2094 1682 1760 20 18.26 14.14 12.91
200
0.98 1.12 2.7 2.34 1.8
150
250
400
UNITS A °C
A
kA2s
kA2s V
m V
A/μs mA
Revision: 14-Jan-14
2 Document Number: 94656
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VSKU105.., VSKV105.. Series
Vishay Semiconductors
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage
Maximum gate voltage required to trigger
Maximum gate current required to trigger
Maximum gate voltage that will not trigger Maximum gate current that will not trigger
SYMBOL PGM PG(AV) IGM - VGM
VGT
IGT
VGD IGD
TEST CONDITIONS
TJ = - 40 °C TJ = 25 °C TJ = 125 °C
Anode supply = 6 V resistive load
TJ = - 40 °C TJ = 25 °C TJ = 125 °C
Anode supply = 6 V resistive load
TJ = 125 °C, rated VDRM applied
TJ = 125 °C, rated VDRM applied
VALUES 12 3.0 3.0 10 4.0 2.5 1.7 270 150 80 0.25 6
UNITS W A
V
mA V mA
BLOCKING
PARAMETER Maximum peak reverse and off-state leakage current at VRRM, VDRM
SYMBOL
IRRM, IDRM
TEST CONDITIONS TJ = 130 °C, gate open circuit
Maximum RMS insulation voltage
VINS
50 Hz
Maximum critical rate of rise of off-state voltage dV/dt TJ = 1.