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VSKV56-12P Dataheets PDF



Part Number VSKV56-12P
Manufacturers Vishay
Logo Vishay
Description ADD-A-PAK Generation VII Power Modules
Datasheet VSKV56-12P DatasheetVSKV56-12P Datasheet (PDF)

VSKU41.., VSKV41.., VSKU56.., VSKV56.. Series www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Thyristor, 45 A/60 A ADD-A-PAK PRODUCT SUMMARY IT(AV) Type 45 A/60 A Modules - Thyristor, Standard MECHANICAL DESCRIPTION The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified in.

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VSKU41.., VSKV41.., VSKU56.., VSKV56.. Series www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Thyristor, 45 A/60 A ADD-A-PAK PRODUCT SUMMARY IT(AV) Type 45 A/60 A Modules - Thyristor, Standard MECHANICAL DESCRIPTION The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. FEATURES • High voltage • Industrial standard package • Low thermal resistance • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate • Up to 1600 V • High surge capability • Easy mounting on heatsink ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IT(AV) IT(RMS) ITSM 85 °C 50 Hz 60 Hz 50 Hz I2t 60 Hz I2t VRRM TStg TJ Range VSK.41 45 70 850 890 3.61 3.30 36.1 400 to 1600 -40 to 125 -40 to 125 VSK.56 60 95 1200 1256 7.20 6.57 72 UNITS A kA2s kA2s V °C Revision: 14-Jan-14 1 Document Number: 94653 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSKU41.., VSKV41.., VSKU56.., VSKV56.. Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VSK.41 VSK.56 04 08 12 16 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 800 1200 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 900 1300 1700 VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 400 800 1200 1600 IRRM, IDRM AT 125 °C mA 15 ON-STATE CONDUCTION PARAMETER Maximum average on-state current Maximum continuous RMS on-state current SYMBOL IT(AV) IT(RMS) Maximum peak, one-cycle non-repetitive on-state current ITSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t (1) Maximum value of threshold voltage VT(TO) (2) Maximum value of on-state  slope resistance Maximum on-state voltage drop Maximum non-repetitive rate of rise of turned on current rt (2) VTM dI/dt Maximum holding current IH Maximum latching current IL Notes (1) I2t for time tx = I2t x tx (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (3) 16.7 % x  x IAV < I <  x IAV (4) I >  x IAV TEST CONDITIONS VSK.41 VSK.56 180° conduction, half sine wave, TC = 85 °C DC 45 60 70 95 TC t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied Sinusoidal half wave, initial TJ = TJ maximum 82 850 890 715 750 81 1200 1256 1000 1056 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied Initial TJ = TJ maximum 3.61 3.30 2.56 2.33 7.20 6.57 5.10 4.56 t = 0.1 ms to 10 ms, no voltage reapplied  TJ = TJ maximum Low level (3) High level (4) TJ = TJ maximum 36.1 72 1.08 0.91 1.12 1.02 Low level (3) High level (4) TJ = TJ maximum 4.7 4.27 4.5 3.77 ITM =  x IT(AV) TJ = 25 °C TJ = 25 °C, from 0.67 VDRM, ITM =  x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit 1.81 1.7 150 200 TJ = 25 °C, anode supply = 6 V, resistive load 400 UNITS A °C A kA2s kA2s V m V A/μs mA Revision: 14-Jan-14 2 Document Number: 94653 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSKU41.., VSKV41.., VSKU56.., VSKV56.. Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum gate voltage required to trigger Maximum gate current required to trigger Maximum gate voltage that will not trigger Maximum gate current that will not trigger SYMBOL PGM PG(AV) IGM - VGM VGT IGT VGD IGD TEST CONDITIONS TJ = - 40 °C TJ = 25 °C TJ = 125 °C Anode supply = 6 V resistive load TJ = - 40 °C TJ = 25 °C TJ = 125 °C Anode supply = 6 V resistive load TJ = 125 °C, rated VDRM applied TJ = 125 °C, rated VDRM applied VSK.41 VSK.56 UNITS 10 W 2.5 2.5 A 10 4.0 V 2.5 1.7 270 150 mA 80 0.25 V 6 mA BLOCKING PARAMETER Maximum peak reverse and off-state  leakage curr.


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