VSKU41.., VSKV41.., VSKU56.., VSKV56.. Series
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Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules Thyristor/Thyristor, 45 A/60 A
ADD-A-PAK
PRODUCT SUMMARY
IT(AV) Type
45 A/60 A Modules - Thyristor, Standard
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces.
FEATURES • High voltage • Industrial standard package • Low thermal resistance • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS • Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate • Up to 1600 V • High surge capability • Easy mounting on heatsink
ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IT(AV) IT(RMS)
ITSM
85 °C
50 Hz 60 Hz
50 Hz I2t
60 Hz
I2t
VRRM TStg TJ
Range
VSK.41 45 70 850 890 3.61 3.30 36.1
400 to 1600 -40 to 125 -40 to 125
VSK.56 60 95
1200 1256 7.20 6.57
72
UNITS
A
kA2s kA2s
V °C
Revision: 14-Jan-14
1 Document Number: 94653
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSKU41.., VSKV41.., VSKU56.., VSKV56.. Series
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE
VSK.41 VSK.56
04 08 12 16
VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
V
400
800
1200
1600
VRSM, MAXIMUM NON-REPETITIVE PEAK
REVERSE VOLTAGE V
500
900
1300
1700
VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT V
400
800
1200
1600
IRRM, IDRM AT 125 °C
mA
15
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
Maximum continuous RMS on-state current
SYMBOL IT(AV)
IT(RMS)
Maximum peak, one-cycle non-repetitive on-state current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t (1)
Maximum value of threshold voltage
VT(TO) (2)
Maximum value of on-state slope resistance
Maximum on-state voltage drop Maximum non-repetitive rate of rise of turned on current
rt (2) VTM dI/dt
Maximum holding current
IH
Maximum latching current
IL
Notes
(1) I2t for time tx = I2t x tx (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (3) 16.7 % x x IAV < I < x IAV (4) I > x IAV
TEST CONDITIONS
VSK.41 VSK.56
180° conduction, half sine wave, TC = 85 °C DC
45 60 70 95
TC t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms
No voltage reapplied
100 % VRRM reapplied
Sinusoidal half wave, initial TJ = TJ maximum
82 850 890 715 750
81 1200 1256 1000 1056
t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms
No voltage reapplied
100 % VRRM reapplied
Initial TJ = TJ maximum
3.61 3.30 2.56 2.33
7.20 6.57 5.10 4.56
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
Low level (3) High level (4)
TJ = TJ maximum
36.1 72
1.08 0.91 1.12 1.02
Low level (3) High level (4)
TJ = TJ maximum
4.7 4.27 4.5 3.77
ITM = x IT(AV) TJ = 25 °C
TJ = 25 °C, from 0.67 VDRM, ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit
1.81 1.7 150 200
TJ = 25 °C, anode supply = 6 V, resistive load
400
UNITS A °C
A
kA2s
kA2s V
m V
A/μs mA
Revision: 14-Jan-14
2 Document Number: 94653
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSKU41.., VSKV41.., VSKU56.., VSKV56.. Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage
Maximum gate voltage required to trigger
Maximum gate current required to trigger
Maximum gate voltage that will not trigger Maximum gate current that will not trigger
SYMBOL PGM PG(AV) IGM - VGM
VGT
IGT
VGD IGD
TEST CONDITIONS
TJ = - 40 °C TJ = 25 °C TJ = 125 °C
Anode supply = 6 V resistive load
TJ = - 40 °C TJ = 25 °C TJ = 125 °C
Anode supply = 6 V resistive load
TJ = 125 °C, rated VDRM applied
TJ = 125 °C, rated VDRM applied
VSK.41 VSK.56 UNITS 10 W 2.5 2.5 A 10 4.0 V 2.5 1.7 270 150 mA 80 0.25 V 6 mA
BLOCKING
PARAMETER Maximum peak reverse and off-state leakage curr.