Glass Passivated Junction Silicon Zener Diodes
1N4740A - 1M200Z
Taiwan Semiconductor
1W, 10V - 200V Glass Passivated Junction Silicon Zener Diode
FEATURES
● Glass pa...
Description
1N4740A - 1M200Z
Taiwan Semiconductor
1W, 10V - 200V Glass Passivated Junction Silicon Zener Diode
FEATURES
● Glass passivated chip junction ● Low profile package ● Built-in strain relief ● Low inductance ● Typical IR less than 5μA above 11V ● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS) ● Adapters ● Lighting application ● On-board DC/DC converter
KEY PARAMETERS
PARAMETER VALUE UNIT
VZ
10 - 200
V
Test current IZT
1.2 - 25
mA
Ptot 1 W
TJ MAX
150 °C
Package
DO-204AL (DO-41)
Configuration
Single Die
MECHANICAL DATA
● Case: DO-204AL (DO-41) ● Molding compound meets UL 94 V-0 flammability rating ● Part no. with suffix "H" means AEC-Q101 qualified ● Packing code with suffix "G" means green compound
(halogen-free) ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Weight: 0.3g (approximately)
DO-204AL (DO-41)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation at TA=50°C Derate above 50°C (Note 1)
1.00 Ptot
6.67
Operating junction temperature range
TJ -55 to +150
Storage temperature range Note: 1. Mounted on Cu-Pad size 5mm x 5mm
TSTG
-55 to +150
UNIT Watts mW/°C
°C °C
1 Version:N1706
1N4740A - 1M200Z
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PARTNO. PACKING
SUFFIX
CODE
PACKING CODE SUFFIX
1N47xxA 1MxxxZ (Note 1)
H
...
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