JS29F16G08AAMC1

Intel® MD516 NAND Flash Memory JS29F16G08AAMC1, JS29F32G08CAMC1, JS29F64G08FAMC1 Product Features Advance Datasheet „ Open NAND Flash Interface (ONFI) 1.0 Compliant „ Multilevel cell (MLC) technology „ Organization: — Page size: 4,314 bytes (4,096 + 218 bytes) — Block size: 128 pages (512K + 27K bytes) — Plane size: 2,048 blocks — Device size: 16Gb: 4,096 blocks; 32Gb: 8,192 blocks; 64Gb: 16,384 blocks „ Read performance — Random read: 50µs — Sequential read: 20ns „ Write performance — Page program: 900µs (TYP) — Block erase: 2ms (TYP) „ Endurance: — 5,000 PROGRAM/ERASE cycles — Data Retention: JEDEC compliant „ Operating Temperature — Commercial: 0 to +70 °C — Extended: -40 to +85 °C „ Core Voltage (VCC): 2.7V - 3.6V „ First block (block address 00h) guaranteed to be valid when shipped from factory „ Industry-standard basic NAND Flash command set „ Advanced command set: — PROGRAM PAGE CACHE MODE — PAGE READ CACHE MODE — One-time programmable (OTP) commands — Two-plane commands — Interleaved die operations — READ UNIQUE ID (contact factory) — READ ID2 (contact factory) „ Operation status byte provides a software method of detecting: — Operation completion — Pass/fail condition — Write-protect status „ Ready/busy# (R/B#) signal provides a hardware method of detecting PROGRAM or ERASE cycle completion „ WP# signal: Entire device hardware write protect „ Staggered Power-up Sequence: Issue RESET command (FFH) „ INTERNAL DATA MOVE operations supported within the plane from whi...