1N5956B

1N5926B THRU 1N5956B GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts FEATURES l Low profile package l Built-in strain relief l l l l l Glass passivated junction Low inductance Typical IR less than 1 £g A above 11V High temperature soldering : 260 ¢J /10 seconds at terminals Plastic package has Underwriters Laboratory Flammability Classification 94V-O MECHANICAL DATA Case: JEDEC DO-41 Molded plastic over passivated junction Terminals: Solder plated, solderable per MIL-STD-750, method 2026 Polarity: Color band denotes positive end (cathode) Standard Packaging: 52mm tape Weight: 0.012 ounce, 0.3 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ¢J ambient temperature unless otherwise specified. SYMBOL PD DC Power Dissipation @ TL=75 ¢J , Measure at Zero Lead Length(Note 1, Fig. 1) Derate above 75 ¢J Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated IFSM load(JEDEC Method) (Note 1,2) Operating Junction and Storage Temperature Range TJ,TSTG NOTES: 2 1. Mounted on 5.0mm (.013mm thick) land areas. 2. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. 3. ZENER VOLTAGE (Vz) MEASUREMENT Nominal zener voltage is measured with the device function in thermal equilibrium with ambient temperature at 25 ¢J . 4.ZENER IMPEDANCE (Zz) DERIVATION ZZT are measured by dividing the ac voltage drop across the device by the accurrent applied. The specified lim...