P-Channel MosFET
Elektronische Bauelemente
SMG2343P
-3.6 A, -30 V, RDS(ON) 0.057 P-Channel Enhancement MOSFET
RoHS Compliant Product ...
Description
Elektronische Bauelemente
SMG2343P
-3.6 A, -30 V, RDS(ON) 0.057 P-Channel Enhancement MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board
space. Fast switching speed. High performance trench technology.
K F
SC-59
A
L
3
Top View
1
E
2
CB
1
D G
H
3 2
J
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V) -30
RDS(on) ( 0.057@VGS= -10V 0.089@VGS= -4.5V
ID(A)
-3.6 -2.8
REF.
A B C D E F
Millimeter
Min. 2.70 2.25 1.30
Max. 3.10 3.00 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G H J K
L
Millimeter
Min. Max. 0.10 REF. 0.40 REF.
0.10 0.20 0.45 0.55
0.85 1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize 7’ inch
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current A
TA=25°C TA=70°C
Pulsed Drain Current B
Continuous Source Current (Diode Conduction) A
Power Dissipation A
TA=25°C TA=70°C
Operating Junction and Storage Temperature Range
VD...
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