SMG2339P

Elektronische Bauelemente SMG2339P -3.6 A, -30 V, RDS(ON) 0.057  P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density process Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Fast Switch.  Low Gate Charge.  Miniature SC-59 surface mount package saves board space. SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) -30 RDS(on) ( 0.057@VGS= -4.5V 0.089@VGS= -2.5V ID(A) -3.6 -2.8  Gate  Drain REF. A B C D E F Millimeter Min. 2.70 2.25 1.30 Max. 3.10 3.00 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15  Source ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A TA=25°C TA=70°C Pulsed Drain Current B Continuous Source Current (Diode Conduction) A Power Dissipation A TA=25°C TA=70°C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, TSTG THE...