Elektronische Bauelemente
SMG2325
0.45A , 250V , RDS(ON) 1.7Ω N-Channel Enhancement Mode MOSFET
RoHS Compliant Product...
Elektronische Bauelemente
SMG2325
0.45A , 250V , RDS(ON) 1.7Ω N-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG2325 is the N-Channel logic enhancement mode power filed effect
transistors are produced using high Cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state Resistance
FEATURES
Simple Drive Requirement Small Package Outline
MARKING
2325
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size 7 inch
SC-59
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
REF.
A B C D E F
Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40
1.70 2.30
0.35 0.50
REF.
G H J K L
Millimeter Min. Max.
0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55
0.85 1.15
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1, VGS@10V
Pulsed Drain Current 2 Power Dissipation 3
TA=25°C TA=70°C
TA=25°C
ID
IDM PD
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient 1
RθJA
Ratings 250 ±20 0.45 0.35 1.4 0.8
-55~150
156
Unit V V
A
A W °C
°C / W
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
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Elektronische Bauelemente
SMG2325
0.45A , 250V , RDS(ON) 1.7Ω N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C ...