SMG2325

Elektronische Bauelemente SMG2325 0.45A , 250V , RDS(ON) 1.7Ω N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SMG2325 is the N-Channel logic enhancement mode power filed effect transistors are produced using high Cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state Resistance FEATURES Simple Drive Requirement Small Package Outline MARKING 2325 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 TOP VIEW ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1, VGS@10V Pulsed Drain Current 2 Power Dissipation 3 TA=25°C TA=70°C TA=25°C ID IDM PD Operating Junction and Storage Temperature Range Tj, Tstg Thermal Resistance Rating Maximum Junction to Ambient 1 RθJA Ratings 250 ±20 0.45 0.35 1.4 0.8 -55~150 156 Unit V V A A W °C °C / W http://www.SeCoSGmbH.com/ 15-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SMG2325 0.45A , 250V , RDS(ON) 1.7Ω N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C ...