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SMG2319P Dataheets PDF



Part Number SMG2319P
Manufacturers SeCoS
Logo SeCoS
Description P-Channel MosFET
Datasheet SMG2319P DatasheetSMG2319P Datasheet (PDF)

Elektronische Bauelemente SMG2319P -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Fast Switch.  Low Gate Charge.  Miniature SC.

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Elektronische Bauelemente SMG2319P -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Fast Switch.  Low Gate Charge.  Miniature SC-59 Surface Mount Package Saves Board Space. APPLICATION Voltage control small signal switch, power management in portable and battery-powered products such as computer portable electronics and other battery power application. PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7’ inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. 2.70 2.25 1.30 Max. 3.10 3.00 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 1 3 2 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, TSTG Thermal Resistance Data Maximum Junction to Ambient 1 t≦5 sec Steady-State Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. RθJA Ratings -30 ±20 -2.1 -1.7 ±10 -0.4 1.25 0.8 -55 ~ 150 250 285 Unit V V A A A W °C °C/W http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 5 Elektronische Bauelemente SMG2319P -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Zero Gate Voltage Drain Current Static - - -1 VDS = -24V, VGS=0 IDSS μA - - -10 VDS = -24V, VGS=0, TJ=55°C Gate-Body Leakage IGSS - - ±100 nA VDS =0, VGS= ±20V Gate-Threshold Voltage On-State Drain Current 1 VGS(th) -1.3 - - V VDS =VGS, ID = -250μA ID(ON) -3 - - A VDS = -5V, VGS= -4.5V Drain-Source On-Resistance 1 Forward Transconductance 1 RDS(ON) - - 200 VGS= -10V, ID = -2.1A mΩ - 300 VGS= -4.5V, ID = -1.7A gFS - 2 - S VDS= -5V,,ID = -2.1A Diode Forward Voltage VSD - -0.7 Dynamic 2 -1.2 V IS= -0.4A, VGS=0 Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg - 3.4 - ID= -2.1A Qgs - 0.8 - nC VDS= -10V Qgd - 1.5 - VGS= -5V Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Td(ON) Tr Td(OFF) Tf -8- 18 - 52 - 39 - VDS= -10V nS VGEN= -10V RG=50Ω ID= -1.1A Notes: 1. Pulse test:PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 5 Elektronische Bauelemente CHARACTERISTIC CURVE SMG2319P -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 5 Elektronische Bauelemente CHARACTERISTIC CURVE SMG2319P -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 5 Elektronische Bauelemente CHARACTERISTIC CURVE SMG2319P -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 5 of 5 .


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