Document
Elektronische Bauelemente
SMG2319P
-2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Fast Switch. Low Gate Charge. Miniature SC-59 Surface Mount Package Saves
Board Space.
APPLICATION
Voltage control small signal switch, power management in portable and battery-powered products such as computer portable electronics and other battery power application.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size 7’ inch
SC-59
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
REF.
A B C D E F
Millimeter
Min. 2.70 2.25 1.30
Max. 3.10 3.00 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G H J K L
Millimeter
Min. Max. 0.10 REF. 0.40 REF.
0.10 0.20 0.45 0.55
0.85 1.15
1 3
2
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
TA=25°C TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
TA=25°C TA=70°C
Operating Junction and Storage Temperature Range
VDS VGS
ID
IDM IS
PD
TJ, TSTG
Thermal Resistance Data
Maximum Junction to Ambient 1
t≦5 sec Steady-State
Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature.
RθJA
Ratings
-30 ±20 -2.1 -1.7 ±10 -0.4 1.25 0.8 -55 ~ 150
250 285
Unit
V V A A A W °C
°C/W
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 5
Elektronische Bauelemente
SMG2319P
-2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Zero Gate Voltage Drain Current
Static
- - -1
VDS = -24V, VGS=0
IDSS
μA
- - -10
VDS = -24V, VGS=0, TJ=55°C
Gate-Body Leakage
IGSS - - ±100 nA VDS =0, VGS= ±20V
Gate-Threshold Voltage On-State Drain Current 1
VGS(th)
-1.3
-
-
V VDS =VGS, ID = -250μA
ID(ON) -3 - - A VDS = -5V, VGS= -4.5V
Drain-Source On-Resistance 1 Forward Transconductance 1
RDS(ON)
-
- 200
VGS= -10V, ID = -2.1A
mΩ
- 300
VGS= -4.5V, ID = -1.7A
gFS - 2 - S VDS= -5V,,ID = -2.1A
Diode Forward Voltage
VSD - -0.7
Dynamic 2
-1.2
V IS= -0.4A, VGS=0
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg - 3.4 -
ID= -2.1A
Qgs
- 0.8 -
nC VDS= -10V
Qgd - 1.5 -
VGS= -5V
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Td(ON) Tr
Td(OFF) Tf
-8- 18 - 52 - 39 -
VDS= -10V
nS
VGEN= -10V RG=50Ω
ID= -1.1A
Notes: 1. Pulse test:PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 5
Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2319P
-2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 5
Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2319P
-2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 4 of 5
Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2319P
-2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 5 of 5
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