SMG2306

Elektronische Bauelemente SMG2306 5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMG2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications Features * Capable of 2.5V gate drive * Lower on-resistance * Reliable and Rugged Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System A L 3 S Top View 21 B D G C H Drain Gate Source G J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Marking : 2306 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current, [email protected] 3 Continuous Drain Current, [email protected] Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM PD@TA=25 oC Tj, Tstg S Ratings 20 ±12 5.3 4.3 10 1.38 0.01 -55~+150 Unit V V A A A W W / oC oC Thermal Data Parameter Thermal Resistance Junction-ambient3 Symbol Rthj-a Ratings 90 Unit oC /W http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente SMG2306 5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Pow...