SMG2305PE

Elektronische Bauelemente SMG2305PE -4.5 A, -20 V, RDS(ON) 43 m P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board space.  Fast switching speed.  High performance trench technology. PACKAGE INFORMATION Package MPQ SC-59 3K LeaderSize 7’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 TA=25°C TA=70°C Power Dissipation 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range VDS VGS ID IDM PD TJ, TSTG Thermal Resistance Data Maximum Junction to Ambient 1 t ≦ 5 sec Steady-State Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. RθJA SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. 2.70 2.25 1.30 Max. 3.10 3.00 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0...