P-Channel MosFET
Elektronische Bauelemente
SMG2309
-3.7A, -30V,RDS(ON) 75m P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Produ...
Description
Elektronische Bauelemente
SMG2309
-3.7A, -30V,RDS(ON) 75m P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SMG2309 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The SMG2309 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
S
Features
A L
3 Top View 21
B
D G
C
* Simple drive requirement * Small package outline
Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System
H Drain
Gate Source
G
Marking : 2309
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current 3 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID@TA=25 oC ID@TA=70 oC
IDM PD@TA=25 oC
Tj, Tstg
J K
D
SC-59 Dim Min Max
A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm
S
Ratings -30 ±20 -3.7 -3.0 -12 1.38 0.01
-55~+150
Unit V V A A A W
W /oC oC
Thermal Data
Parameter Thermal Resistance Junction-ambient3
Symbol Rthj-a
Ratings 90
Unit
oC /W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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Elektronische Bauelemente
SMG2309
-3.7A, -30V,RDS(ON) 75m P-Channel Enh...
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