CGHV22200
200 W, 1800-2200 MHz, GaN HEMT for LTE
Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is input matched ...
