CGH40180PP

CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40180PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package. PackaPgNe:TCyGpeHs4:04148001P9P9 FEATURES Up to 2.5 GHz Operation 20 dB Small Signal Gain at 1.0 GHz 15 dB Small Signal Gain at 2.0 GHz 220 W typical PSAT 70 % Efficiency at PSAT 28 V Operation APPLICATIONS 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Rev 3.0 – May 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque VDSS VGS TSTG TJ IGMAX IDMAX TS τ 84 -10, +2 -65, +150 225 60 24 245 80 Thermal Resistance, Junction to Case3 RθJC 0.9 Case Operating Temperature3,4 TC -40, +150 Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note ...