Document
CGH31240F
240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: 3414204200F1
Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.7 GHz
2.8 GHz
2.9 GHz
3.0 GHz
Output Power
243 249 249 245
3.1 GHz 243
Gain
11.9
11.9
11.9
11.9
11.9
Power Added Efficiency
60
61
60
59
52
Note: Measured in the CGH31240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm.
Units W dB %
Features
• 2.7 - 3.1 GHz Operation • 12 dB Power Gain • 60 % Power Added Efficiency • < 0.2 dB Pulsed Amplitude Droop
Rev 2.0 – May 2015
Subject to change without notice. www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Pulse Width
PW 1
Duty Cycle
DC 50
Drain-Source Voltage Gate-to-Source Voltage Power Dissipation Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque
VDSS VGS PDISS TSTG TJ IGMAX IDMAX TS
τ
120 -10, +2
345 -65, +150
225 60 24 245 40
Pulsed Thermal Resistance, Junction to Case3
RθJC
0.5
Case Operating Temperature3
TC -40, +150
Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH31240F at PDISS = 280 W. Pulse Width = 300 μS, Duty Cycle = 20%.
Electrical Characteristics (TC = 25˚C)
Characteristics DC Characteristics1
Symbol
Min.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
–
Saturated Drain Current2
IDS 46.4
Drain-Source Breakdown Voltage
VBR 120
RF Characteristics3 (TC = 25˚C, F0 = 2.7, 2.9, 3.1 GHz unless otherwise noted)
Output Power
POUT
200
Power Added Efficiency1 at 2.7 GHz
PAE 49
Power Added Efficiency2 at 2.9 GHz
PAE 52
Power Added Efficiency3 at 3.1 GHz
PAE 42
Power Gain
GP 11
Small Signal Gain
S21 14
Typ.
-3.0 -2.7 56.0
–
250 54 58 49 12 16
Input Return Loss
S11 – –12
Output Return Loss
S22 – –6.0
Pulsed Amplitude Droop
D – 0.15
Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH31240F-AMP. Pulse Width = 300 μS, Duty Cycle = 20%.
Max.
-2.3 – – –
– – – – – – –8.0 –4.5 –
Units ms % Volts Volts Watts ˚C ˚C mA A ˚C in-oz ˚C/W ˚C
Conditions
25˚C 25˚C
25˚C 25˚C
85˚C 30 seconds
Units
Conditions
VDC VDS = 10 V, ID = 57.6 mA VDC VDS = 28 V, ID = 1.0 A A VDS = 6.0 V, VGS = 2.0 V VDC VGS = -8 V, ID = 57.6 mA
W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm % VDD = 28 V, IDQ = 1.0 A, PIN =.