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CGH31240F Dataheets PDF



Part Number CGH31240F
Manufacturers Cree
Logo Cree
Description GaN HEMT
Datasheet CGH31240F DatasheetCGH31240F Datasheet (PDF)

CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. PackaPgeN:TCypGeH: 3414204200F1 Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of D.

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CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. PackaPgeN:TCypGeH: 3414204200F1 Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.7 GHz 2.8 GHz 2.9 GHz 3.0 GHz Output Power 243 249 249 245 3.1 GHz 243 Gain 11.9 11.9 11.9 11.9 11.9 Power Added Efficiency 60 61 60 59 52 Note: Measured in the CGH31240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm. Units W dB % Features • 2.7 - 3.1 GHz Operation • 12 dB Power Gain • 60 % Power Added Efficiency • < 0.2 dB Pulsed Amplitude Droop Rev 2.0 – May 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Pulse Width PW 1 Duty Cycle DC 50 Drain-Source Voltage Gate-to-Source Voltage Power Dissipation Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque VDSS VGS PDISS TSTG TJ IGMAX IDMAX TS τ 120 -10, +2 345 -65, +150 225 60 24 245 40 Pulsed Thermal Resistance, Junction to Case3 RθJC 0.5 Case Operating Temperature3 TC -40, +150 Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH31240F at PDISS = 280 W. Pulse Width = 300 μS, Duty Cycle = 20%. Electrical Characteristics (TC = 25˚C) Characteristics DC Characteristics1 Symbol Min. Gate Threshold Voltage VGS(th) -3.8 Gate Quiescent Voltage VGS(Q) – Saturated Drain Current2 IDS 46.4 Drain-Source Breakdown Voltage VBR 120 RF Characteristics3 (TC = 25˚C, F0 = 2.7, 2.9, 3.1 GHz unless otherwise noted) Output Power POUT 200 Power Added Efficiency1 at 2.7 GHz PAE 49 Power Added Efficiency2 at 2.9 GHz PAE 52 Power Added Efficiency3 at 3.1 GHz PAE 42 Power Gain GP 11 Small Signal Gain S21 14 Typ. -3.0 -2.7 56.0 – 250 54 58 49 12 16 Input Return Loss S11 – –12 Output Return Loss S22 – –6.0 Pulsed Amplitude Droop D – 0.15 Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH31240F-AMP. Pulse Width = 300 μS, Duty Cycle = 20%. Max. -2.3 – – – – – – – – – –8.0 –4.5 – Units ms % Volts Volts Watts ˚C ˚C mA A ˚C in-oz ˚C/W ˚C Conditions 25˚C 25˚C 25˚C 25˚C 85˚C 30 seconds Units Conditions VDC VDS = 10 V, ID = 57.6 mA VDC VDS = 28 V, ID = 1.0 A A VDS = 6.0 V, VGS = 2.0 V VDC VGS = -8 V, ID = 57.6 mA W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm % VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm % VDD = 28 V, IDQ = 1.0 A, PIN =.


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