XP1035-BD

5.9-9.5 GHz GaAs MMIC Linear Power Amplifier April 2008 - Rev 02-Apr-08 Features 26 dB Small Signal Gain 39 dBm Third Order Intercept Point (OIP3) Integrated Power Detector 100% On-Wafer RF Testing P1035-BD General Description The XP1035-BD is a linear power amplifier that operates over the 5.9-9.5GHz frequency band.The device provides 26 dB gain and 39 dBm Output Third Order Intercept Point (OIP3) across the band and is comprised of a three stage power amplifier with an integrated, temperature compensated on-chip power detector.The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the part.The device is manufactured in GaAs PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance.The XP1035-BD is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings1 Supply Voltage (Vd1,2,3) +7.2V Supply Current (Id1,2,3) 600 mA Gate Bias Voltage (Vg1,2,3) -3V Max Power Dissipation (Pdiss) 4.2W RF Input Power +15 dBm Operating Temperature (Ta) -55 to +85 ºC Storage Temperature (Tstg) -65 to +150 ºC Channel Temperature (Tch) -40 to MTTF Graph2 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device’s MTTF. Channel temperature should be kept as low as possible to maximize lifetime. Electrical Characteristics (Ambient Temperature T =...